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Evaluation Kits from Analog Devices Inc.

EV1HMC305SLP4

Analog Devices Inc.
The HMC305SLP4E is a broadband 5-bit positivecontrol Silicon IC digital attenuator with CMOS compatibleserial-to-parallel driver package in a leadlessQFN 4x4 mm SMT package. Covering 0.4 to 6GHz, the insertion loss is typically less than 1.6 dB.The attenuator bit values are 0.5 (LSB), 1, 2, 4, and8 dB for a total attenuation of 15.5 dB. Attenuationaccuracy is excellent at ?0.25 dB typical with an IIP3of up to +52 dBm. Five bit serial control words areused to select each attenuation state. A single Vccbias of +3.3V to +5V is required.The HMC305S(E) is a replacement for the HMC305A(E), HMC305B(E) and HMC305(E).Applications Cellular Infrastructure Wireless Infrastructure Microwave Radio & VSAT Test Instrumentation

EV1HMC322ALP4

Analog Devices Inc.
The HMC322ALP4E is a broadband non-reflective GaAs MESFET SP8T switch in a low cost leadless surface mount package. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to three. The switch operates using a negative control voltage of 0/-5 volts, and requires a fixed bias of -5V. This switch is suitable for usage in 50-Ohm or 75-Ohm systems.ApplicationsThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz

EV1HMC427ALP3E

Analog Devices Inc.
The HMC427ALP3E is a low loss broadband positive control transfer switch in leadless surface mount package. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. The switch operates using a positive control voltage of 0/+5V and requires a fixed bias of +5V at < 20 ?A.Applications Test Instrumentation Fiber Optics & Broadband Telecom Basestation Infrastructure Microwave Radio & VSAT Military Radios, Radar, & ECM

EV1HMC589AST89

Analog Devices Inc.
The HMC589AST89E is an InGaP HBT Gain Block MMIC SMT amplifier covering DC to 4 GHz and packaged in an industry standard SOT89E. The amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a LO or PA driver with up to +19 dBm P1dB output power for cellular/3G, FWA, CATV, microwave radio and test equipment applications. The HMC589AST89E offers 20 dB gain and +33 dBm output IP3 at 1 GHz while requiring only 82 mA from a single positive supply. The HMC589AST89E InGaP HBT gain block offers excellent output power and gain stability over temperature.APPLICATIONSCellular / PCS / 3GFixed Wireless & WLANCATV, Cable Modem & DBSMicrowave Radio & Test EquipmentIF & RF Applications

EV1HMC6146BLC5A

Analog Devices Inc.
The HMC6146BLC5A is a compact GaAs MMIC I/Q variable gain upconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 12 dB with 25 dBc of sideband rejection, and 17 db of gain control. The HMC 6146BLC5A utilizes a RF variable gain amplifier preceded by an I/Q mixer where the LO is driven by a X2 multiplier. IF1 and IF2 mixer inputs are provided and an external 90? hybrid is needed to select the required sideband.The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC6146BLC5A is a much smaller alternative to hybrid style single sideband upconverter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.APPLICATIONS Point-to-Point & Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors

EV1HMC712ALP3CE

Analog Devices Inc.
The HMC712ALP3CE is an absorptive Voltage Variable Attenuator (VVA) which operates from 5 - 26.5 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a 28 dB amplitude range. It features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. Optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the 1st attenuation stage from -5V to 0V with Vctrl2 fixed at -5V. The control voltage of the 2nd attenuation stage, Vctrl2, should then be varied from -5V to 0V, with Vctrl1 fixed at 0V. The HMC712ALP3CE is housed in a RoHS compliant 3x3 mm QFN leadless package.Furthermore, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input IP3 performance. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave point-to-point and VSAT radios.Applications Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar

EV1HMC717ALP3

Analog Devices Inc.
The HMC717ALP3E is a GaAs PHEMT MMICLow Noise Amplifier that is ideal for fixed wirelessand LTE/WiMAX/4G basestation front-end receiversoperating between 4.8 and 6.0 GHz. The amplifierhas been optimized to provide 1.1 dB noise figure,14.5 dB gain and +29.5 dBm output IP3 from a singlesupply of +5V. Input and output return losses areexcellent and the LNA requires minimal externalmatching and bias decoupling components. TheHMC717ALP3E can be biased with +3V to +5V andfeatures an externally adjustable supply currentwhich allows the designer to tailor the linearityperformance of the LNA for each application.Applications Fixed wireless and LTE/WiMAX/4G BTS and infrastructure Repeaters and Femtocells Public safety radio Access points

EV1HMC773ALC3B

Analog Devices Inc.
The HMC773ALC3B is a general-purpose, double balanced mixer ina leadless, RoHS compliant LCC package that can be used as anupconverter or downconverter from 6 GHz to 26 GHz. Thismixer requires no external components or matching circuitry. The HMC773ALC3B provides excellent LO to RF and LO to IFsuppression due to optimized balun structures. The mixeroperates well with LO drive levels of 13 dBm or above. TheHMC773ALC3B eliminates the need for wire bonding, allowing useof surface-mount manufacturing techniques.Applications Point to point radios Point to multipoint radios and very small aperture terminals (VSATs) Test equipment and sensors Military end use

EV1HMC7950LS6

Analog Devices Inc.
The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.0 dB of noise figure, 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain compression, requiring 64 mA from a 5 V supply. The HMC7950 is self biased with only a single positive supply needed to achieve a drain current, IDD, of 64 mA. The HMC7950 also has a gain control option, VGG2. The HMC7950 amplifier input/outputs are internally matched to 50 ? and dc blocked. It comes in a 6 mm ? 6 mm, 16-terminal LCC SMT ceramic package that is easy to handle and assemble.APPLICATIONS Test instrumentation Military and space

EV1HMC7992LP3D

Analog Devices Inc.
The HMC7992 is a general-purpose, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, four-throw (SP4T) switch in aleadless, surface-mount package. The switch is ideal for cellular infrastructure applications, offers high isolation of 45 dB typical at 2 GHz, and a low insertion loss of 0.6 dB at 2 GHz. It offers excellent power handling capability up to 6.0 GHz, with inputpower of 1 dB compression point (P1dB) of 35 dBm at 5 V operation. The HMC7992 has good low frequency input power handling below 0.1 GHz and can operate well down to 10 kHz, with a typical 1 dB compression of 21 dBm and an IIP3 of 37 dBm at 1 MHz.The on-chip circuitry allows the HMC7992 to operate at a single, positive supply voltage range from 3.3 V to 5 V, and as well as a single, positive control voltage from 0 V to 1.8 V/3.3 V/5.0 V. A 2:4 decoder integrated in the switch requires only two controlled input signals, with a positive control voltage range from 0 V to 1.8 V/3.3 V/5.0 V, to select one of the four radio frequency (RF)paths.Applications Cellular/4G infrastructure Wireless infrastructure Automotive telematics Mobile radios Test equipment

EV1HMC8074LP6G

Analog Devices Inc.
The HMC8074LP6GE is a QUADBAND MMIC VCO that integrates the resonators, negative resistance devices,varactor diodes, and features two RF output pins. The VCO?s phase noise performance is excellent over temperature,shock, and process due to the oscillator?s monolithic structure. With a +4.75V supply, the output power is typically -5to +6 dBm for each RF output, respectively. The voltage controlled oscillator is packaged in a leadless QFN 6x6 mmsurface mount package, and requires no external matching components.Applications Test Equipment & Industrial Controls VSAT Radio Point to Point/Multi-Point Radio Military End-Use

EV1HMC8342LS6

Analog Devices Inc.
The HMC8342 is a gallium arsenide (GaAs), monolithic microware integrated circuit (MMIC), ?2 active broadband frequency multiplier. When driven by a 5 dBm signal, the multiplier provides 15 dBm typical output power. The output frequency range is from 22 GHz to 42 GHz, and the input fundamental and third harmonic isolations measured at the output are ?23 dBc and ?20 dBc, respectively, at an output frequency of 30 GHz. The HMC8342 is ideal for use in LO multiplier chains for point to point and VSAT radios, resulting in a reduced parts count vs. traditional design approaches.APPLICATIONSClock generationPoint to point and very small aperture terminal (VSAT) radiosTest instrumentationMilitary and space

EV1HMC8362LP6G

Analog Devices Inc.
The HMC8362 is a gallium arsenide (GaAs), quadband, monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) designed to offer wideband capabilities without compromising on phase noise performance. The device integrates four independent, narrow-band VCOs with overlapping frequency bands, operating at a fundamental frequency range of 11.90 GHz to 18.30 GHz. The consistent tuning sensitivity across all frequency bands simplifies the synthesizer loop filter design. The tuning port is common to all VCO cores for a simpler design of the phase-locked loop (PLL) feedback path. The HMC8362 also offers a low typical current consumption of 72 mA for power sensitive applications.The HMC8362 integrates resonators, negative resistance devices, and varactor diodes. The monolithic structure of the oscillator offers very low phase noise, optimal temperature stability, and is immune to vibration and process variation. The four VCOs are packaged in a single, 6 mm ? 6 mm, surface-mount lead frame chip scale package (LFCSP), and require no external matching components. Combined with a high frequency, high performance phase-locked loop (PLL), the ADF41513, the HMC8362 offers a complete RF or microwave frequency generation solution. APPLICATIONSElectronic test and measurement Industrial and medical instrumentation Point to point and multipoint radios Aerospace and defense Wireless communication infrastructure

EV1HMC8364LP6G

Analog Devices Inc.
The HMC8364 is a gallium arsenide (GaAs), quadband, monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) designed to offer wideband frequency capabilities without compromising phase noise performance. The device integrates four independent, narrow-band VCOs with overlapping frequency bands, operating at a fundamental frequency range of 18.10 GHz to 26.60 GHz. The consistent tuning sensitivity across all frequency bands simplifies the synthesizer loop filter design.The tuning port is common to all VCO cores for a simpler design of the phase-locked loop (PLL) feedback path. The HMC8364 also offers a low typical current consumption of 99 mA for power sensitive applications. The HMC8364 integrates resonators, negative resistance devices, and varactor diodes. The monolithic structure of the oscillator offers very low phase noise, optimal temperature stability, and is immune to vibration and process variation.The four VCOs are packaged in a single, 6 mm ? 6 mm, surface-mount lead frame chip scale package (LFCSP), and require no external matching components. Combined with a high frequency, high performance PLL, the ADF41513, the HMC8364 offers a complete RF or microwave frequency generation solution.APPLICATIONS Electronic test and measurement Industrial and medical instrumentation Point to point and multipoint radios Aerospace and defense Wireless communication infrastructure

EV1HMC8411LP2F

Analog Devices Inc.
The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz.The HMC8411LP2FE provides a typical gain of 15.5 dB, a 1.7 dB typical noise figure, and a typical output third-order intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V supply voltage. The saturated output power (PSAT) of 19.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q), or image rejection mixers.The HMC8411LP2FE also features inputs and outputs that are internally matched to 50 ?, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm ? 2 mm, 6-lead LFCSP.Multifunction pin names may be referenced by their relevant function only.Applications Test instrumentation Military communications

EV1HMC8413LP2F

Analog Devices Inc.
The HMC8413 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 9 GHz.The HMC8413 provides a typical gain of 19.5 dB, a 1.9 dB typical noise figure, and a typical output third-order intercept (OIP3) of 35 dBm at 0.01 GHz to 7 GHz, requiring only 95 mA from a 5 V supply voltage. The saturated output power (PSAT) of 22 dBm typical at 0.01 GHz to 7 GHz enables the low noise amplifier to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, in-phase/quadrature (I/Q) or image rejection mixers.The HMC8413 also features inputs and outputs that are internally matched to 50 ?, making the device ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8413 is housed in an RoHS-compliant, 2 mm ? 2 mm, 6-lead LFCSP.APPLICATIONS Test instrumentation Military communications Military radar Telecommunications

EV1HMC862ALP3

Analog Devices Inc.
The HMC862A is a low noise, programmable frequency divider in a 3 mm ? 3 mm, leadless, surface-mount package. The frequency divider, N, can be programmed to divide from 1, 2, 4, or 8 in the 0.1 GHz to 24 GHz input frequency range.The low phase noise, wide frequency range, and flexible division ratio make this device ideal for high performance and wideband communication systems.Applications Satellite communication systems Point to point and point to multipoint radios Military applications Test equipment

EV1HMC882ALP5

Analog Devices Inc.
The HMC882A is a monolithic microwave integrated circuit(MMIC) low-pass filter that features a user-selectable cutofffrequency (f3dB). The cutoff frequency can be varied from3.95 GHz to 6.9 GHz by applying a single analog tuning voltagebetween 0 V and 14 V. This low-pass filter provides a low 3 dBinsertion loss, 13 dB return loss, and >20 dB stopband attenuationat 1.28 ? f3dB GHz. This tunable filter can be used as a muchsmaller alternative to physically large switched filter banks andcavity tuned filters. The HMC882A has excellent microphonicsdue to the monolithic design and low residual phase noise of?165 dBc/Hz, and provides a dynamically adjustable solution inadvanced communications applications. The low-pass tunablefilter is packaged in a RoHS compliant, 5 mm ? 5mm LFCSPpackage.Applications Testing and measurement equipment Military radar and electronic warfare/electronic counter measures (ECMs) Satellite communication and space Industrial and medical equipment

EV1HMC943APM5

Analog Devices Inc.
The HMC943APM5E is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), >1.5 W power amplifier that operates between 24 GHz to 34 GHz. The HMC943APM5E provides 23 dB of gain, 34 dBm of saturated output power (PSAT), and 23% power added efficiency (PAE) from a 5.5 V supply. The high output third-order intercept (IP3) of 39 dBm makes the HMC943APM5E ideal for microwave radio applications. A power detector output is also available. The HMC943APM5E amplifier input/outputs (I/Os) are internally matched to 50 ?. The device is packaged in a leadless, 5 mm ? 5 mm, surface-mount LFCSP_CAV package, and requires no external matching components.Applications Point to point radios Point to multipoint radios Microwave radios, very small aperture terminals (VSATs), and satellite communications (SATCOM) Military and space

EV1HMC998APM5

Analog Devices Inc.
The HMC998APM5E is a GaAs pHEMT MMIC Distributed Power Amplifier which operates from DC to 22 GHz. The amplifier provides +15 dB of gain, +42 dBm output IP3, and +32 dBm of output power at 1dB gain compression while requiring only 500mA from a +15V supply. The HMC998APM5E exhibits a slightly positive gain slope from 3 to 17 GHz making it ideal for military and space and test equipment applications. The HMC998APM5E amplifier I/Os are internally matched to 50 Ohms and is housed ina RoHS compliant, 5x5 mm leadless QFN surface mount package.APPLICATIONS Test instumentation Military & space Fiber optics

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