Windowless Non-Cooled Large Area Silicon APDs ; SHV package

Cooled Large Area Silicon APD Modules ; Module

InGaAs Photodetectors ; TO-39 package flat window

Cadmium Sulfoselenide (CdS) sensors : Leaded Ceramic Packages 0.433 x 0.366 Inches ; Illuminated Resistance

Cadmium Sulfoselenide (CdS) sensors : Leaded Ceramic Packages 0.200 x 0.169 Inches ; Illuminated Resistance

Cadmium Sulfoselenide (CdS) sensors : Leaded Ceramic Packages 0.200 x 0.169 Inches ; Illuminated Resistance

Cadmium Sulfoselenide (CdS) sensors : Leaded Ceramic Packages 0.165 x 0.138 Inches ; Illuminated Resistance

850 nm GaAlAs High Power LED Emitters ; TO-46 Package

880 nm GaAlAs High Power LED Emitters ; TO-46 Package

880 nm GaAlAs High Power LED Emitters ; TO-46 Package

880 nm GaAlAs High Power LED Emitters ; TO-46 Package

Photodiode

Photodiode 660nm 13ns 120°

Photodiode 660nm 100ns 130° 2-SMD, No Lead

Photodiode 950nm 13ns 120° Radial

CdS Cells 520nm 12 ~ 58kOhms @ 10 lux

Board Mount Motion & Position Sensors 1x15 mm active area duo-lateral effect position sensor detector

CdS Cells 520nm 27 ~ 60kOhms @ 10 lux

Photodiode 130° 1210 (3225 Metric)

PHOTODIODE PLANAR CHIP; No. of Pins:1Pins; Diode Case Style:Planar; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity ±:60°; Dark Current:5µA; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; Packaging:Each; Product Range:-; Automotive Qualification Standard:-; MSL:-; Active Area:45.2mm²; Breakdown Voltage Vbr:20V; Diode Type:Photodiode; External Depth:25.4mm; External Length / Height:2.5mm; Height:2.5mm; Open Circuit Voltage:0.4V; Operating Temperature Range:-40°C to +125°C; Peak Wavelength:930nm; Reverse Voltage Vr Max:20V; Sensitivity:0.55A/W; Short Circuit Current:2.3mA; Wavelength Typ:930nm