The HMC6981 is a four-stage GaAs pHEMT MMIC Power Amplifier with an integrated temperature compensated on-chip Power Detector, which operates between 15 and 20 GHz. The amplifier provides 26 dB of gain, +34.5 dBm of saturated output power, and 25% PAE from a +6V supply. With an excellent output IP3 of +43.5 dBm, the HMC6981 is ideal for linear applications such as high capacity point-to-point or point-to-multi-point radios or SATCOM applications demanding +34.5 dBm of efficient saturated output power. The HMC6981 is housed in a ceramic 6 x 6 mm high frequency air cavity package which exhibits low thermal resistance and is compatible with high volume surface mount manufacturing techniques. The RF I/Os are internally matched to 50 Ohms.Applications Point-to-Point Radios Point-to-Multi-Point Radios SATCOM
The HMC394LP4(E) is a low noise GaAs HBT programmable 5-bit counter in 4x4 mm leadless surface mount package. This device allows continuous division from N= 2 to 32 at input frequencies up to 2.2 GHz. The output voltage swing is 800 mV with a duty cycle inversely proportional to N. The low additive SSB phase noise of -153 dBc/Hz at 100 KHz offset makes this counter an excellent choice for low noise synthesizer applications.APPLICATIONSProgrammable divider for offset synthesizer and variable divide by N applications: Satellite Communication Systems Point-to-Point and Point-to-Multi-Point Radios LMDS SONET
The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications Wireless Local Loop
The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.Applications Cellular / PCS / 3G Portable & Infrastructure Wireless Local Loop
The HMC194AMS8E is a low-cost SPDT switch in an 8-lead MSOP packages for use in applications which require high isolation between two RF paths. The devices can control signals from DC to 3 GHz and have been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC cur- rents with control inputs compatible with CMOS and most TTL logic families. RF1 and RF2 are reflective opens when ?OFF?.APPLICATIONS Cellular/PCS Base Stations Portable Wireless MMDS & WirelessLAN