EV1HMC1113LP5
Analog Devices Inc.The HMC1113LP5E is a compact GaAs MMIC I/Q downconverter in a leadless 5 x 5 mm low stress injection molded plastic surface mount package. This device provides a small signal conversion gain of 12 dB with a noise figure of 1.8 dB and 25 dBc of image rejection. The HMC1113LP5E utilizes an LNA followed by an image reject mixer which is driven by an LO buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I/Q mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The HMC1113LP5E is a much smaller alternative to hybrid style image reject mixer downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.Applications Point-to-Point &?Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Maritime & Mobile Radios
EV1HMC1114PM5
Analog Devices Inc.TThe HMC1114PM5E is a gallium nitride (GaN), broadband power amplifier delivering >10 W (up to 42 dBm) typical with up to 55% power added efficiency (PAE) across an instantaneous bandwidth range of 2.7 GHz to 3.8 GHz, at an input power (PIN) of 18 dBm. The gain flatness is The HMC1114PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.Applications Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructure Test and measurement equipment Commercial and military radars General-purpose transmitter amplification
EV1HMC1121LP6G
Analog Devices Inc.The HMC1121 is a three-stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 4 W power amplifier with an integrated temperature compensated on-chip power detector that operates between 5.5 GHz and 8.5 GHz. The HMC1121 provides 28 dB of gain, 44 dBm output IP3, and 36.5 dBm of saturated output power at 30% PAE from a 7 Vpower supply. The HMC1121 exhibits excellent linearity and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make it an excellent candidate for last stage signal amplification preceding the antenna. Ideal for supporting higher volume applications, the HMC1121 is provided in a 40-lead LFCSP package.Applications Point to point radios Point to multipoint radios? Very small aperture terminals (VSATs) and satellite?communications (SATCOMs) Military electronic warfare ?(EW) and electronic counter measures (ECM)
EV1HMC1160LP5
Analog Devices Inc.The HMC1160 is a MMIC voltage controlled oscillator that integrates a resonator, a negative resistance device, and a varactor diode, and features a half frequency output.Because of the monolithic construction of the oscillator, output power and phase noise performance are excellent over temperature.Power output is 12 dBm typical from a 5 V supply voltage. The voltage controlled oscillator is housed in a RoHS compliant SMT package and requires no external matching components.APPLICATIONS Point to point and multipoint radio Test equipment and industrial controls VSAT
EV1HMC1165LP5
Analog Devices Inc.The HMC1165 is a monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) that integrates a resonator, a negative resistance device, and a varactor diode, and features a half frequency output. Because of the monolithic construction of the oscillator, the output power and phase noise performance are excellent over temperature.The output power is 8 dBm typical from a 5 V supply voltage. The VCO is housed in a RoHS-compliant LFCSP and requires no external matching components.Applications Point to point and multipoint radios? Test equipment and industrial controls? Very small aperture terminals (VSATs)?
EV1HMC1168LP5
Analog Devices Inc.The HMC1168 is a monolithic microwave integrated circuit(MMIC), voltage controlled oscillator (VCO) that integrates aresonator, a negative resistance device, and a varactor diode,and features a half frequency output.Because of the monolithic construction of the oscillator, theoutput power and phase noise performance are excellent overtemperatureThe output power is 10 dBm typical from a 5 V supply voltage.The VCO is housed in a RoHS compliant LFCSP and requiresno external matching components.Applications Point to point and multipoint radios? Test equipment and industrial controls? Very small aperture terminals (VSATs)?
EV1HMC273AMS10G
Analog Devices Inc.The HMC273AMS10G(E) is a general purposebroadband 5-Bit positive control GaAs IC digitalattenuator in a 10 lead MSOP plastic package.Covering 0.7 to 3.8 GHz, the insertion loss is typicallyless than 3 dB. The attenuator bit values are1 (LSB), 2, 4, 8, and 16 dB for a total attenuationof 31 dB. Accuracy is excellent at ?0.2 dB typicalwith an IIP3 of up to +46 dBm. Five bit control voltageinputs, toggled between 0 and +3 to +5 volts, areused to select each attenuation state. A single Vddbias of +3 to +5 volts applied through an external5K Ohm resistor is required.Applications Cellular; UMTS/3G infrastructure ISM, MMDS, WLAN, WiMAX Microwave radio & VSAT Test equipment and sensors
EV1HMC306AMS10
Analog Devices Inc.The HMC306AMS10 & HMC306AMS10E are general purpose broadband 5-bit positive control GaAs IC digital attenuators in 10 lead MSOP surface mount plastic packages. Covering 0.7 to 3.8 GHz, the insertion loss is typically less than 1.5 to 2.3 dB. These attenuators? bit values are 0.5 (LSB), 1, 2, 4 and 8 dB for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at ? 0.2 dB typical with an IIP3 of up to +52 dBm. Five bit control voltage inputs, toggled between 0 and +3 to +5V, are used to select each attenuation state. A single Vdd bias of +3 to +5V applied through an external 5K Ohm resistor is required.APPLICATIONS Cellular; UMTS/3G Infrastructure? ISM, MMDS, WLAN, WiMAX? Microwave Radio & VSAT? Test Equipment and Sensors
EV1HMC321ALP4E
Analog Devices Inc.The HMC321ALP4E is a broadband nonreflective GaAs SP8T switch in low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to three. The switch operates using a positive control voltage of 0/+5 volts, and requires a fixed bias of +5 volts. This switch is suitable for usage in 50-Ohm or 75-Ohm systems.ApplicationsThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz
EV1HMC346ALP3
Analog Devices Inc.The HMC346ALP3E is an absorptive Voltage Variable Attenuator (VVA) in low cost leadless surface mount plastic package operating from DC - 14 GHz. It features an on-chip reference attenuator for use with an external op-amp to provide simple single voltage attenuation control, 0 to -5V. The device is ideal in designs where an analog DC control signal must control RF signal levels over a 30 dB amplitude range.Applications Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation
EV1HMC392ALC4
Analog Devices Inc.The HMC392ALC4 is a GaAs MMIC Low NoiseAmplifier which operates between 3.5 and 8.0GHz. Housed in a leadless 4x4 mm SMT package,this amplifier provides 17 dB of gain, 1.8 dB noisefigure and 34.5 dBm IP3 from a +5V supply voltage.HMC392ALC4 functions well as a low noise front endor as a driver amplifier. The RF Input and Output pinsare DC blocked and matched to 50 Ohms for easeof use. The HMC392ALC4 allows the use of surfacemount manufacturing techniques and is suitablefor high reliability military, industrial and spaceapplications.Applications Point-to-point radios VSAT LO driver for HMC mixers Military EW, ECM, C3I Space
EV1HMC412BMS8G
Analog Devices Inc.The HMC412BMS8GE is a passive double-balancedmixer that operates from 8 to 16 GHz. TheHMC412BMS8GE operates with LO drive levelsbetween 9 to 15 dBm and provides 8 dB of conversionloss across the entire specified frequency band. Thismixer requires no external components or bias.Applications Long Haul Radio Platforms Microwave Radio VSAT
EV1HMC424ALH5
Analog Devices Inc.The HMC424ALH5 is a broadband 6-bit GaAs MMIC digital attenuator housed in a hermetic SMT leadless package. Covering DC to 13 GHz, the insertion loss is less than 3.5 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ?0.5 dB typical step error with an IIP3 of +34 dBm. Six control voltage inputs, toggled between 0 and -5V, are used to select each attenuation state. A single Vee bias of -5V allows operation at frequencies down to DC. The HMC424ALH5 is compatible with standard and lead free surface mount manufacturing techniques and is suitable for high reliability military, industrial and space applications.Applications Telecom Infrastructure Military Radio, Radar & ECM Space Systems Test Instrumentation
EV1HMC424ALP3
Analog Devices Inc.The HMC424ALP3E is a broadband, 6-bit, gallium arsenide (GaAs), digital attenuator in low cost, leadless surface-mount package with a 31.5 dB attenuation control range in 0.5 dB steps.The HMC424ALP3E offers excellent attenuation accuracy of ?(0.2 dB + 4% of attenuation state) and high input linearity with a typical insertion loss of less than 4 dB over the specified frequency range from 0.1 GHz to 13.0 GHz. The attenuator bit values are 0.5 dB (LSB), 1 dB, 2 dB, 4 dB, 8 dB, and 16 dB for a total attenuation of 31.5 dB with a ?0.5 dB typical step error.The device allows a user to program the attenuation state via six parallel control inputs toggled between 0 V and VEE.The HMC424ALP3E operates with a single negative supply voltage from ?3 V to ?5 V, and requires an external level shifter to interface with a CMOS/transistor to transistor logic (TTL) interface.The HMC424ALP3E comes in a RoHS compliant, compact, 3 mm ? 3 mm, 16-lead lead frame chip scale package (LFCSP).Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors Intermediate frequency (IF) and RF designs Military and space
EV1HMC468ALP3
Analog Devices Inc.The HMC468ALP3E is a broadband 3-bit GaAs IC digital attenuators in a low cost leadless surface mount package. Covering DC to 6.0 GHz, the insertion loss is less than 1 dB typical up to 4 GHz. The attenuator bit values are 1 (LSB), 2 and 4 dB for a total attenuation of 7 dB. Attenuation accuracy is excellent at ?0.4 dB typical step error with an IIP3 of +55 dBm. Three control voltage inputs, toggled between 0 and +5V, are used to select each attenuation state. A single Vdd bias of +5V is required.APPLICATIONS Cellular; UMTS/3G Infrastructure? Fixed Wireless & WLL? Microwave Radio & VSAT? Test Equipment
EV1HMC525ALC4
Analog Devices Inc.The HMC525ALC4 is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband (SSB) upconverter. The mixer uses two standard double balanced mixer cells and a 90? hybrid fabricated in a GaAs, metalsemiconductor field effect transistor (MESFET) process. The HMC525ALC4 is a much smaller alternative to a hybrid style image reject mixer and a SSB upconverter assembly. The HMC525ALC4 eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques. Applications Microwave and very small aperture terminal radios Test equipment Point to point radios Military electronic warfare; electronic countermeasure; and command, control, communications, and intelligence
EV1HMC554ALC3B
Analog Devices Inc.The HMC554ALC3B is a general-purpose, double balanced mixer in a leadless RoHS compliant leadless chip carrier (LCC) package that can be used as an upconverter or downconverter between 10 GHz and 20 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external?components or matching circuitry. The HMC554ALC3B provides excellent local oscillator (LO) to RF and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS compliant HMC554ALC3B eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Military electronic warfare (EW); electronic countermeasure (ECM); and command, control, communications and intelligence (C3I)
EV1HMC5805ALS6
Analog Devices Inc.The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DCand 40 GHz. The amplifier provides 11.5 dB of gain,29 dBm output IP3 and +24 dBm of output power at1 dB gain compression while requiring 175 mA froma +10 V supply. The HMC5805ALS6 is ideal for EW,ECM, Radar and test equipment applications. TheHMC5805ALS6 amplifier I/Os are internally matchedto 50 Ohms and the 6x6 mm SMT package is wellsuited for automated assembly techniques.Applications Test instrumentation Microwave radio and VSAT Military and space Telecom infrastructure Fiber optics
EV1HMC6147ALC5A
Analog Devices Inc.The HMC6147ALC5A is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 13 dB with 25 dBc of sideband rejection. The HMC6147ALC5A utilizes a low noise amplifier to drive the I/Q mixer where the LO is driven by a X2 multiplier. IF1 and IF2 mixer inputs are provided and an external 90? hybrid is needed to select the required sideband.The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC 6147ALC5A is a much smaller alternative to hybrid style single sideband converter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.Applications Point-to-Point & Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors??
EV1HMC647ALP6
Analog Devices Inc.The HMC647ALP6E is a 6-bit digital phase shifter which is rated from 2.5 to 3.1 GHz, providing 360 degrees of phase coverage, with a LSB of 5.625 degrees. The HMC647ALP6E features very low RMS phase error of 1.5 degrees and extremely low insertion loss variation of ?0.4 dB across all phase states. This high accuracy phase shifter is controlled with positive control logic of 0/+5V The HMC647ALP6E is housed in a compact 6x6 mm plastic leadless SMT package and is internally matched to 50 Ohms with no external components.APPLICATIONS EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation
