Dual Common Cathode SCHOTTKY Barrier Rectifier in A Low Profile Hermetic TO39 Package

Schottky Diode in Hermetic Ceramic Surface Mount Package for High Reliability Applications

TRANS AUDIO NPN 230V 30A TO-264; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency ft:60MHz; Power Dissipation Pd:400W; DC Collector Current:30A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Gain Bandwidth ft Typ:60MHz

DARLINGTON TRANSISTOR, SOT-93; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:200W; DC Collector Current:16A; DC Current Gain hFE:3000hFE; Transistor Case Style:SOT-93; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:16A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:16A; Current Ic Continuous a Max:16A; Current Ic hFE:10A; Full Power Rating Temperature:25°C; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:200W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:80V

TRANSISTOR, DARLINGTON TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:-; Power Dissipation Pd:62.5W; DC Collector Current:8A; DC Current Gain hFE:750hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:8A; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:62.5W; Transistor Type:Power Darlington; Voltage Vcbo:120V

TRANSISTOR, PNP, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:40W; DC Collector Current:3A; DC Current Gain hFE:85hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Collector Emitter Saturation Voltage Vce(on):700mV; Continuous Collector Current Ic Max:5A; Current Ic Continuous a Max:3A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; No. of Transistors:1; Power Dissipation Ptot Max:40W; Termination Type:Through Hole; Voltage Vcbo:45V

Bipolar Transistors - BJT

Bipolar Transistors - BJT

Bipolar Transistors - BJT Obsolete 9/2019 20 Pin, SMT Quad PNP transistor

Bipolar Transistors - BJT TRANS BI-POLAR SS

NChannel Power MOSFET Enhancement Mode

NChannel Power MOSFET for Hi-Rel Applications

NChannel Power MOSFET

NChannel Power MOSFET

NChannel Power MOSFET for Hi-Rel Applications

N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package

Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications

PNP Silicon Transistor in A Hermetically Sealed Ceramic Surface Mount Package for High Relibility Applications

High Voltage NPN Switching Transistor in A Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications

Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications