Bipolar PNP Device in a Hermetically sealed TO5 Metal Package

Bipolar PNP Device in a Hermetically sealed TO5 Metal Package

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Medium Power Silicon NPN Transistor

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Silicon PNP Transistor

Bipolar NPNP Device in a Hermetically sealed TO39 Metal Package

Silicon Planar Epitaxial PNP Transistor

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Small Signal NChannel JFET in A Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications

NChannel Enhancement MODE High Voltage Power MOSFETs

PChannel Power MOSFET

MOSFET N TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:160V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Alternate Case Style:TO-204AA; Current Id Max:8A; Current Temperature:25°C; Device Marking:BUZ900; Full Power Rating Temperature:25°C; No. of Transistors:1; Termination Type:Through Hole; Voltage Vds Typ:160V; Voltage Vgs Max:1.5V

N CHANNEL MOSFET 200V 8A TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.5V; No. of Pins:3Pins;RoHS Compliant: Yes

NChannel Power MOSFET, VDSX Drain Source Voltage 200V

NChannel Power MOSFET, VDSX Drain Source Voltage 220V

N-Channel Lateral Power MOSEFT for Audio, VDSS Drain Source Voltage 200V

Gold Metallised Multi-Purpose Silicon DMOS RF FET 20W - 12.5V - 400MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 10W - 7.2V - 1GHz Single Ended