Bipolar PNP Device in a Hermetically sealed TO39 Metal Package

Silicon Planar Epitaxial NPN Transistor

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Silicon Epitaxial NPN Transistor

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

High Speed Medium Voltage Switch

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

Small Signal PNP Transistors in TO-5

Small Signal PNP Transistors in TO-5

Small Signal PNP Transistors in TO-5

NPN Bipolar Power Switching Transistors, VCBO Collector Base Voltage 250V

MOSFET N-CHANNEL TO39

DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:90W; DC Collector Current:10A; DC Current Gain hFE:200hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:10A; Collector Emitter Saturation Voltage Vce(on):-2V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:3A; Device Marking:BDT62A; Full Power Rating Temperature:25°C; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:80V

DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:90W; DC Collector Current:10A; DC Current Gain hFE:3000hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Av Current Ic:10A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50kHz; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:80V