Silicon PNP Epitaxial Base in TO220 Metal And Ceramic Surface Mount Packages, VCBO Collector - Base voltage (IE = 0) -100V

Negative Adjustable Voltage Regulator

P–Channel Power MOSFET for Hi–Rel Applications

Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications

Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications

Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications

Dual Schottky Barrier Diode in A SMD1 Ceramic Surface Mount Package for Hi–Rel Applications

DIODE HIREL HITEM SIC REC TOSMD1; Product Range:-; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Continuous Forward Current If:10A; Total Capacitive Charge Qc:25nC; Diode Case Style:TO-276AB; No. of Pins:3 Pin; Junction Temperature Tj Max:225°C; Packaging:Each; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jun-2015); Diode Type:Schottky; Forward Current If(AV):10A; Forward Surge Current Ifsm Max:250A; Forward Voltage VF Max:1.8V; MSL:MSL 1 - Unlimited; No. of Pins:3Pins; Operating Temperature Max:225°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +225°C

P–Channel Power MOSFET

N–Channel Enhancement Mode High Voltage Power MOSFETs

Silicon NPN Power Transistor

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Silicon Epitaxial PNP Tansistor

High Power Silicon NPN Tansistors

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package