Silicon Multi Epitaxial NPN Transistor

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

High Power PNP Silicon Tansistors, VCB Collector-Base Voltage 120V

High Power PNP Silicon Tansistors, VCB Collector-Base Voltage 140V

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

High Voltage NPN Power Transistor

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

PNP Darlington Silicon Power Transistor, VCEO Collector Emitter Voltage -80V

DARLINGTON TRANSISTOR TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:7MHz; Power Dissipation Pd:150W; DC Collector Current:-16A; DC Current Gain hFE:1000hFE; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Av Current Ic:16A; Continuous Collector Current Ic Max:16A; Current Ic Continuous a Max:16A; Current Ic hFE:10A; Device Marking:BDX66C; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:60kHz; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:150W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:120V

NPN Epitaxial Base Darlington Power Transistor, VCBO Collector Emitter Voltage (Open Base) 60V