MOSFET P TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Id Max:8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:-1.5V

P–Channel Power MOSFET, VDSX Drain – Source Voltage -250V

Gold Metallised Multi-Purpose Silicon DMOS RF FET 10W - 12.5V - 500MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 6W - 7.2V - 500MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 10W - 12.5V - 1GHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 20W - 12.5V - 500MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 60W - 28V - 175MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 48W - 28V - 500MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 20W - 28V - 175MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 150W - 50V - 175MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 150W - 28V - 175MHz Single Ended

Gold Metallised Multi-Purpose Silicon DMOS RF FET 125W - 28V - 500MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 100W - 28V - 500MHz Push-Pull

Gold Metallised Multi-Purpose Silicon DMOS RF FET 300W - 28V - 175MHz Push-Pull

NPN Silicon Transistor

NPN Multi-Epitaxial Transistor

NPN Silicon Transistor

Advanced Distributed Base Design High Voltage High Speed NPN Silicon Power Transistor

Silicon Epitaxial Planar PNP Transistor, VCBO Collector – Base Voltage -260V

Voltage Regulator Diode in A Ceramic Surface Mount Package for Hi–Rel Applications, VZ nom 9.1V