DARLINGTON TRANSISTOR TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:120V; Transition Frequency ft:50kHz; Power Dissipation Pd:150W; DC Collector Current:16A; DC Current Gain hFE:5200hFE; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Av Current Ic:16A; Collector Emitter Saturation Voltage Vce(on):2V; Continuous Collector Current Ic Max:16A; Current Ic Continuous a Max:16A; Current Ic hFE:10A; Device Marking:BDX67C; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:50kHz; Hfe Min:1000; No. of Transistors:1; Power Dissipation Ptot Max:150W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:140V

PNP Darlington Power Transistor, VCBO Collector Base Voltage (Open Emitter) -60V

NPN Darlington Power Transistor, VCBO Collector Base Voltage (Open Emitter) 120V

NPN Darlington Power Transistor, VCBO Collector Base Voltage (Open Emitter) 140V

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar PNP Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Silicon NPN Transistor

High Current NPN Silicon Transistor

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

High Current NPN Silicon Transistor

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package