Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications

Bipolar PNP Device in a Hermetically sealed Ceramic Surface Mount Package for High Reliability Applications

Hermetically Sealed Fast Recovery Silicon Rectifier for HiRel Applications, VRRM Peak Repetitive Reverse Voltage 300V

Hermetically Sealed Fast Recovery Silicon Rectifier for HiRel Applications, VRRM Peak Repetitive Reverse Voltage 400V

Hermetically Sealed Fast Recovery Silicon Rectifier for HiRel Applications, VRRM Peak Repetitive Reverse Voltage 500V

Dual Fast Recovery Rectifier Diode, VRRM Peak Repetitive Reverse Voltage 200V

Positive Adjustable Voltage Regulator

TRANS,AUDIO,PNP,260V,30A,TO-264; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-260V; Transition Frequency ft:60MHz; Power Dissipation Pd:400W; DC Collector Current:-30A; DC Current Gain hFE:50hFE; Transistor Case Style:TO-264; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Gain Bandwidth ft Typ:35MHz

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:20MHz; Power Dissipation Pd:125W; DC Collector Current:15A; DC Current Gain hFE:40hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Continuous Collector Current Ic Max:15A; Current Ic Continuous a Max:7A; Current Ic hFE:5A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:10MHz; Hfe Min:40; No. of Transistors:1; Power Dissipation Ptot Max:125W; Termination Type:Through Hole; Transistor Type:Power Bipolar; Voltage Vcbo:60V

MOSFET, N TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation Pd:125W; Transistor Case Style:TO-3; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:TO-204AA; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:4MHz; Power Dissipation Pd:90W; DC Collector Current:10A; DC Current Gain hFE:20hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Av Current Ic:10A; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:10A; Current Ic Continuous a Max:10A; Current Ic hFE:4A; Device Marking:BDT95; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:4MHz; Gain Bandwidth ft Typ:4MHz; Hfe Min:20; No. of Transistors:1; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Voltage Vcbo:100V

TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:60W; DC Collector Current:3A; DC Current Gain hFE:30hFE; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (15-Jan-2019); Alternate Case Style:SOT-78B; Application Code:GP; Av Current Ic:8A; Collector Emitter Saturation Voltage Vce(on):1V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:3A; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:2.5kHz; Gain Bandwidth ft Typ:7MHz; Hfe Min:30; No. of Transistors:1; Power Dissipation Ptot Max:60W; Termination Type:Through Hole; Voltage Vcbo:100V

TRANSISTOR, NPN, TO-247; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:8MHz; Power Dissipation Pd:150W; DC Collector Current:40A; DC Current Gain hFE:10hFE; Transistor Case Style:TO-247; No. of Pins:3Pins; MSL:-; SVHC:No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on):600mV; Continuous Collector Current Ic Max:30A; Current Ic Continuous a Max:30A; Current Ic hFE:40A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:8MHz; Gain Bandwidth ft Typ:8MHz; Hfe Min:10; No. of Transistors:1; Power Dissipation Ptot Max:150W; Termination Type:Screw

MOSFET MOSFET - POWER

N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET

Dual N-Channel Enhancement Mode Power MOSFET

N–Channel Power MOSFET

N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package

Dual N-Channel MOSFETs