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Toshiba N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK TK55S10N1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 157 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

Toshiba N-Channel MOSFET, 150 A, 45 V, 8-Pin SOP TPH1R005PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

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