Toshiba Electronics Europe
MOSFET, N, 600V, TO-220SIS; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-220SIS; No. of Pins:3Pins; Operating Temperature Max:-; MSL:-; Pulse Current Idm:30A; Termination Type:Through Hole; Transistor Type:Switching; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:10V