MOSFET Output Optocouplers Photorelay 0.4A 60V 1500Vrms 130pF 0.2mA

N-Channel 40V 150A (Tc) 1W (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V

Toshiba AC Input MOSFET Output Optocoupler, Through Hole, 4-Pin DIP, Maximum Forward Voltage: 1.4V, Maximum Input Current: 30 mA, Isolation Voltage: 5000 Vrms, MPN: TLP240G(F(O

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO4, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 mA, Isolation Voltage: 3750 Vrms, Maximum Current Transfer Ratio: 300%, Typical Fall Time: 3µs, Series: TLP 293, Special Features: Suitable for High-Density Surface Mounting Applications Such as Small Switching Power Supplies And Programmable Controllers, TLP293 Consists of a Low Input Type Photo Transistor Optically Coupled to an InGaAs Infrared Emitting Diode, Very Small And Thin C, MPN: TLP293(V4-GRTR,E(T

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F SSM3J334R,LF(T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 136 mΩ, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, Height: 0.8mm, Length: 2.9mm

Toshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 2 x 1.25 x 0.9mm, Maximum Collector Emitter Saturation Voltage: -0.3 V, Maximum Operating Temperature: +125 °C