Diode Schottky 30V 2A 2-Pin SOD-323HE

MOSFET

LED Displays & Accessories Green

High Speed Optocouplers IC cplr 1Mbps CTR=19%min

Hard Drive 147 GB 15K RPM Internal 2.5 Inch 15mm SAS-2 6 Gb/s

Hard Drive 4 TB 7.2K RPM Internal 3.5 Inch 26.1mm SAS-2 6 Gb/s

Hard Drive 3 TB 7.2K RPM Internal 3.5 Inch 26.1mm SAS-2 6 Gb/s

Hard Drive 5 TB 7.2K RPM Internal 3.5 Inch 26.1mm SAS-2 6 Gb/s

LED Uni-Color White 165lm 5000K Chip LED 2-Pin SMD T/R

LED Uni-Color White 165lm 4000K Chip LED 2-Pin SMD T/R

LED Uni-Color White 128lm 5000K Chip LED 2-Pin SMD T/R

LED Uni-Color White 145lm 5700K Chip LED 2-Pin SMD T/R

LED Uni-Color White 21.8lm 5700K Chip LED 2-Pin SMD

LED Uni-Color White 72lm 5000K Chip LED 2-Pin SMD T/R

Toshiba RN1506(TE85L,F) Dual NPN Digital Transistor, 50 V, 5-Pin SSOP, Mounting Type: Surface Mount, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Number of Elements per Chip: 2, Dimensions: 2.9 x 1.6 x 1.1mm, Minimum Operating Temperature: -55 °C, Maximum Collector Emitter Saturation Voltage: 0.3 V, Typical Resistor Ratio: 0.1

Toshiba N-Channel MOSFET, 170 mA, 60 V, 3-Pin USM SSM3K7002CFU,LF(T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO-6L, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 mA, Isolation Voltage: 5 kVrms, Logic Output: Yes, Maximum Current Transfer Ratio: 600%, Minimum Current Transfer Ratio: 50%, Typical Fall Time: 3µs, MPN: TLP383(E(T

Toshiba TB67H401FTG(O,EL), Brushed DC Motor DC Motor Driver 48-Pin, VQFN, Output Configuration: Dual Half Bridge, Maximum Output Current: 6A, Maximum Supply Voltage: 5 V

Toshiba N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220SIS TK17A80W,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 290 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.7V, Height: 15mm

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V