Toshiba N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

Toshiba N-Channel MOSFET, 170 mA, 60 V, 3-Pin USM SSM3K7002CFU,LF(T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO-6L, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 mA, Isolation Voltage: 5 kVrms, Logic Output: Yes, Maximum Current Transfer Ratio: 600%, Minimum Current Transfer Ratio: 50%, Typical Fall Time: 3µs, MPN: TLP383(E(T

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

Toshiba N-Channel MOSFET, 17 A, 800 V, 3-Pin TO-220SIS TK17A80W,S4X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 290 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 45 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.7V, Height: 15mm

Toshiba N-Channel MOSFET, 340 A, 40 V, 8-Pin SOP TPHR8504PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 170 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba TB67H401FTG(O,EL), Brushed DC Motor DC Motor Driver 48-Pin, VQFN, Output Configuration: Dual Half Bridge, Maximum Output Current: 6A, Maximum Supply Voltage: 5 V

Toshiba TC74VHC165FK(EL,K) 8-stage Surface Mount Shift Register VHC, 16-Pin VSSOP, Operation Mode: Serial to Serial, Parallel, Minimum Operating Supply Voltage: 2 V, Maximum Operating Supply Voltage: 5.5 V, Dimensions: 4 x 3 x 0.8mm, Direction Type: Uni-Directional, Maximum Operating Temperature: 85 °C, Minimum Operating Temperature: -40 °C, Triggering Type: Positive Edge

Toshiba TBD62084AFWG(Z,EHZ 8 Power Switch IC 18-Pin, P-SOP, Switch On Resistance: 3.25Ω, Maximum Operating Supply Voltage: 25 V, Maximum Operating Current: 0.5mA, Power Rating: 1.47W, Mounting Type: Surface Mount, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Dimensions: 11.68 x 7.62 x 2.4mm

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1,S1X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 255 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 15.1mm

Toshiba N-Channel MOSFET, 92 A, 40 V, 8-Pin SOP TPH3R704PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 81 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

Toshiba N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220SIS TK35A65W5,S5X(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 50 W, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.7V, Height: 15mm

Toshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 2 x 1.25 x 0.9mm, Maximum Collector Emitter Saturation Voltage: -0.3 V, Maximum Operating Temperature: +125 °C

N-Channel 40V 150A (Tc) 1W (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

Toshiba Diode, 3-Pin SOT-346 (SC-59) 1SS193(TE85L,F), Diode Configuration: Single, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm

Toshiba P-Channel MOSFET, 4 A, 30 V, 3-Pin SOT-23F SSM3J334R,LF(T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 136 mΩ, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: +20 V, Height: 0.8mm, Length: 2.9mm

Toshiba TC74VHC157FK(EL,K) Multiplexer Quad 2:1, 16-Pin VSSOP, Mounting Type: Surface Mount, Dimensions: 4 x 3 x 0.8mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 4mm, Maximum Power Dissipation: 180 mW, Width: 3mm

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO4, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 (Forward Current) mA, Isolation Voltage: 3750 Vrms, Maximum Current Transfer Ratio: 300%, Minimum Current Transfer Ratio: 100%, Typical Fall Time: 3µs, Series: TLP293, Special Features: Collector Emitter Voltage 80 V (Min.), Suitable for High Density Surface Mounting Applications, MPN: TLP293(GR-TPL,E(T

Toshiba DC Input Phototransistor Output Optocoupler, Surface Mount, 4-Pin SO4, Maximum Forward Voltage: 1.4V, Typical Rise Time: 2µs, Maximum Input Current: 50 mA, Isolation Voltage: 3750 Vrms, Maximum Current Transfer Ratio: 300%, Typical Fall Time: 3µs, Series: TLP 293, Special Features: Suitable for High-Density Surface Mounting Applications Such as Small Switching Power Supplies And Programmable Controllers, TLP293 Consists of a Low Input Type Photo Transistor Optically Coupled to an InGaAs Infrared Emitting Diode, Very Small And Thin C, MPN: TLP293(V4-GRTR,E(T