Part Number: TK090Z65Z,S1F(O
Description
Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V
Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V
