SiC MOSFET module application note Electrical characteristics

This document describes the basic structures, ratings, and electrical characteristics of IGBTs. It also provides usage considerations for IGBTs.

This document summarizes some tips for designing peripheral circuits that should be noted when you use the VCE(sat) detection function of a smart gate driver coupler such as TLP5214A/TLP5214/TLP5212/TLP5222. The VCE(sat) detection (DESAT detection) circuit which detects the rise of the collector or drain voltage (VCE) when an over-current flows into the power semiconductor switch device (hereinafter referred to ‘power device’) driven by the gate driver by causes, such as a short circuit of load, makes the power device turn off, and protects it. However, the VCE may rise unusually and largely due to the inductances of the loads when the power device switches, and if it enters the DESAT terminal, an erroneous detection of the DESAT detection circuit may occur. In three-phase inverters and other inverters, noise generated during switching of other phases may cause an erroneous detection of the DESAT detection circuit due to noise circulating through power supply lines and GND lines or electromagnetic induction between wires. This document provides tips to reduce the likelihood of DESAT false detections.

Photorelays (MOSFET output photocouplers) have a variety of advantages, and replacement from mechanical relays is progressing. However, there are some points that must be taken into consideration in comparison with mechanical relays when they are used in high-frequency circuits such as semiconductor testers and measuring instrument applications. This application note mainly describes precautions when controlling high-frequency signals with photorelays. Here, signals with a frequency ranging from several hundred MHz to several ten GHz are positioned as high-frequency signals. In addition, assume that a 1-Form-A photorelay (a photorelay in which the output-side MOSFET is turned on when the input-side LED signal is on) is used as a precondition.

Thermal Design for Schottky Barrier Diodes (SBDs) in the US2H Package

The US2H package is a thermally enhanced package specifically designed for diodes. This application note describes the advantages of Schottky barrier diodes (SBDs) in the US2H package as well as the power losses of and the thermal design for SBDs.