Description

TSM7N90CZ C0G N-Channel MOSFET, 7 A, 900 V, 3-Pin TO-220 Taiwan Semi. Maximum Drain Source Resistance: 1.9 Ω. Maximum Gate Threshold Voltage: 4V. Minimum Gate Threshold Voltage: 2V. Maximum Gate Source Voltage: ±30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 250 W. Length: 10mm., Taiwan Semiconductor