Schottky Diodes & Rectifiers 20A,150V,DUAL SCHOTTKY Rect

Rectifiers 10A 200V

Zener Diodes 56 Volt 500mW 5%

Taiwan Semi, 5.1V Zener Diode 6% 500 mW SMT 2-Pin Quadro MiniMelf. Diode Configuration: Single. Mounting Type: Surface Mount. Zener Type: Voltage Regulator. Zener Voltage Tolerance: 0.06. Test Current: 5mA. Maximum Zener Impedance: 35Ω. Maximum Reverse Leakage Current: 100nA. Length: 3.7mm. Dimensions: 3.7 x 1.6 x 1.8mm. Height: 1.8mm. MPN: BZT55C5V1 L1, Taiwan Semiconductor

Taiwan Semi P6KE47CA R0, Bi-Directional TVS Diode, 600W, 2-Pin DO-15. Diode Configuration: Single. Maximum Clamping Voltage: 64.8V. Minimum Breakdown Voltage: 44.7V. Mounting Type: Through Hole. Maximum Reverse Stand-off Voltage: 40.2V. Maximum Peak Pulse Current: 9.7A. Minimum Operating Temperature: -55 °C. Maximum Operating Temperature: +175 °C. Test Current: 1mA. Dimensions: 7.6 x 3.6 x 3.6mm., Taiwan Semiconductor

Taiwan Semi P6KE8.2A R0, Uni-Directional TVS Diode, 600W, 2-Pin DO-15. Diode Configuration: Single. Maximum Clamping Voltage: 12.1V. Minimum Breakdown Voltage: 7.79V. Mounting Type: Through Hole. Maximum Reverse Stand-off Voltage: 7V. Maximum Peak Pulse Current: 52A. Minimum Operating Temperature: -55 °C. Maximum Operating Temperature: +175 °C. Width: 3.6mm. Maximum Reverse Leakage Current: 200µA., Taiwan Semiconductor

Taiwan Semi MUR460 R0 Diode, 600V 4A, 2-Pin DO-201AD. Diode Configuration: Single. Mounting Type: Through Hole. Diode Type: Silicon Junction. Diode Technology: Silicon Junction. Maximum Forward Voltage Drop: 1.28V. Length: 9.5mm. Peak Reverse Recovery Time: 50ns. Diameter: 5.6mm. Peak Non-Repetitive Forward Surge Current: 70A. Minimum Operating Temperature: -65 °C., Taiwan Semiconductor

Taiwan Semi SS16L R3 SMT Schottky Diode, 60V 1A, 2-Pin Sub SMA. Diode Configuration: Single. Mounting Type: Surface Mount. Maximum Forward Voltage Drop: 700mV. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Peak Reverse Current: 6mA. Minimum Operating Temperature: -55 °C., Taiwan Semiconductor

Taiwan Semiconductor BC807-25 RF PNP Transistor, 500 mA, 45 V, 3-Pin SOT-23. Mounting Type: Surface Mount. Maximum Power Dissipation: 300 mW. Minimum DC Current Gain: 160. Transistor Configuration: Single. Maximum Collector Base Voltage: -50 V. Maximum Emitter Base Voltage: -5 V. Maximum Operating Frequency: 100 MHz. Number of Elements per Chip: 1. Maximum Collector Emitter Saturation Voltage: -0.7 V. Maximum Base Emitter Saturation Voltage: -1.2 V.

Taiwan Semi, 18V Zener Diode 5% 500 mW SMT 2-Pin MiniMELF. Diode Configuration: Single. Mounting Type: Surface Mount. Zener Type: Voltage Regulator. Zener Voltage Tolerance: 0.05. Test Current: 5mA. Maximum Zener Impedance: 50Ω. Maximum Reverse Leakage Current: 100nA. Length: 3.7mm. Diameter: 1.6mm. Dimensions: 1.6 (Dia.) x 3.7mm. MPN: BZV55C18 L1, Taiwan Semiconductor

Taiwan Semi, 5.1V Zener Diode 6% 500 mW Through Hole 2-Pin DO-35. Diode Configuration: Single. Zener Type: Voltage Regulator. Zener Voltage Tolerance: 0.06. Test Current: 5mA. Maximum Zener Impedance: 35Ω. Maximum Reverse Leakage Current: 100nA. Length: 3.7mm. Diameter: 2.1mm. Dimensions: 2.1 (Dia.) x 3.7mm. MPN: BZX55C5V1 R0, Taiwan Semiconductor

Taiwan Semi HS1DL R3G SMT Diode, 200V 1A, 2-Pin Sub SMA. Diode Configuration: Single. Mounting Type: Surface Mount. Diode Type: Silicon Junction. Diode Technology: Silicon Junction. Maximum Forward Voltage Drop: 1V. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Peak Reverse Recovery Time: 50ns. Peak Non-Repetitive Forward Surge Current: 30A., Taiwan Semiconductor

Taiwan Semi RSFKL R3 SMT Fast Recovery Diode, 800V 500mA, 2-Pin Sub SMA. Diode Configuration: Single. Number of Elements per Chip: 1. Mounting Type: Surface Mount. Diode Technology: Silicon Junction. Diode Type: Silicon Junction. Maximum Forward Voltage Drop: 1.3V. Length: 2.9mm. Width: 1.9mm. Height: 1.43mm. Peak Reverse Recovery Time: 500ns., Taiwan Semiconductor

Taiwan Semi, 18V Zener Diode 2% 200 mW SMT 2-Pin SOD-323F. Diode Configuration: Single. Mounting Type: Surface Mount. Zener Type: General Purpose. Zener Voltage Tolerance: 0.02. Test Current: 5mA. Maximum Zener Impedance: 45Ω. Maximum Reverse Leakage Current: 45nA. Length: 1.8mm. Dimensions: 1.8 x 1.35 x 1mm. Height: 1mm. MPN: BZT52B18S RR, Taiwan Semiconductor

Taiwan Semi 1N5817 R0 Schottky Diode, 20V 1A, 2-Pin DO-41. Diode Configuration: Single. Mounting Type: Through Hole. Maximum Forward Voltage Drop: 750mV. Length: 5.2mm. Width: 2.7mm. Height: 2.7mm. Maximum Operating Temperature: +125 °C. Peak Non-Repetitive Forward Surge Current: 30A., Taiwan Semiconductor

Taiwan Semi P6KE16CA R0, Bi-Directional TVS Diode, 600W, 2-Pin DO-15. Diode Configuration: Single. Maximum Clamping Voltage: 22.5V. Minimum Breakdown Voltage: 15.2V. Mounting Type: Through Hole. Maximum Reverse Stand-off Voltage: 13.6V. Maximum Peak Pulse Current: 28A. Minimum Operating Temperature: -55 °C. Maximum Operating Temperature: +175 °C. Dimensions: 7.6 x 3.6 x 3.6mm. Length: 7.6mm., Taiwan Semiconductor

Taiwan Semiconductor GBPC1504 T0, Bridge Rectifier, 15A 400V, 4-Pin GBPC. Bridge Type: Single Phase. Mounting Type: Screw Mount. Diode Technology: Silicon Junction. Configuration: Single. Peak Non-Repetitive Forward Surge Current: 300A. Maximum Operating Temperature: +150 °C. Minimum Operating Temperature: -50 °C. Peak Forward Voltage: 1.1V. Peak Reverse Current: 5µA. Length: 29mm. Width: 29mm.

Taiwan Semi MUR160 R0 Switching Diode, 600V 1A, 2-Pin DO-15. Diode Configuration: Single. Mounting Type: Through Hole. Diode Type: Silicon Junction. Diode Technology: Silicon Junction. Maximum Forward Voltage Drop: 1.25V. Length: 7.6mm. Width: 3.6mm. Height: 3.6mm. Peak Reverse Recovery Time: 50ns., Taiwan Semiconductor

TSM2306CX RFG N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 Taiwan Semi. Maximum Drain Source Resistance: 94 mΩ. Maximum Gate Threshold Voltage: 3V. Maximum Gate Source Voltage: -20 V, +20 V. Mounting Type: Surface Mount. Transistor Configuration: Single. Channel Mode: Enhancement. Maximum Power Dissipation: 1.25 W. Length: 3.1mm. Number of Elements per Chip: 1. Minimum Operating Temperature: -55 °C., Taiwan Semiconductor

TSM10NC60CF C0G N-Channel MOSFET, 10 A, 650 V, 3-Pin ITO-220 Taiwan Semi. Maximum Drain Source Resistance: 750 mΩ. Maximum Gate Threshold Voltage: 4.5V. Minimum Gate Threshold Voltage: 2.5V. Maximum Gate Source Voltage: ±30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 45 W. Typical Gate Charge @ Vgs: 33 nC @ 10 V., Taiwan Semiconductor