Description

TSM60NB260CI C0G N-Channel MOSFET, 13 A, 600 V, 3-Pin ITO-220S Taiwan Semi. Maximum Drain Source Resistance: 260 mΩ. Maximum Gate Threshold Voltage: 4V. Minimum Gate Threshold Voltage: 2V. Maximum Gate Source Voltage: ±30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 32.1 W. Typical Gate Charge @ Vgs: 30 nC @ 10 V., Taiwan Semiconductor