TSM4N80CI C0G N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi. Maximum Drain Source Resistance: 3 Ω. Maximum Gate Threshold Voltage: 4V. Minimum Gate Threshold Voltage: 2V. Maximum Gate Source Voltage: ±30 V. Mounting Type: Through Hole. Transistor Configuration: Single. Channel Mode: Enhancement. Category: Power MOSFET. Maximum Power Dissipation: 38.7 W. Forward Transconductance: 7.1S., Taiwan Semiconductor