IGBT MODULE QUAD 1.2KV 35A; Transistor Polarity:Quad NPN; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT 3 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 35

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 35

IGBT Module ;RoHS Compliant: Yes

IGBT MODULE DUAL N CH 600V 130A; Transistor Polarity:Dual N Channel; DC Collector Current:130A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 5; Current(A): 200

IGBT 3 (Trench) MOSFET; CASE: SEMITRANS 3; Current(A): 300

IGBT MODULE 600V 400A SEMITRANS 3; Transistor Polarity:N Channel; DC Collector Current:400A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:7Pins ;RoHS Compliant: Yes

SKM25GD125D

NPT IGBT (Ultrafast) MOSFET; CASE: SEMITRANS 6; Current(A): 25

TRANSISTOR; Transistor Type:IGBT Module; DC Collector Current:79A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:7; Package / Case:SEMITRANS 2

IGBT MODULE DUAL N CH 1.2KV 115A; Transistor Polarity:Dual N Channel; DC Collector Current:115A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT MODULE DUAL N CH 1.2KV 100A; Transistor Polarity:Dual N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT MODULE DUAL 1.2KV 154A; Transistor Polarity:Dual NPN; DC Collector Current:154A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 3; Current(A): 100

IGBT MODULE DUAL N CH 1.2KV 159A; Transistor Polarity:Dual N Channel; DC Collector Current:159A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

NPT IGBT (Ultrafast) MOSFET; CASE: SEMITRANS 3; Current(A): 200

IGBT MODULE SINGLE 1.2KV 422A; Transistor Polarity:NPN; DC Collector Current:422A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT MODULE N-CH 1.2KV 422A; Transistor Polarity:N Channel; DC Collector Current:422A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:175°C; Product Range:SEMITRANS 4 Series; SVHC:No SVHC (12-Jan-2017)

IGBT Module; Transistor Type:IGBT Module; IGBT Module; Transistor Type:IGBT Module; DC Collector Current:422A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:800mV; No. of Pins:7; Package / Case:SEMITRANS 3