IGBT MODULE N-CH 1.2KV 422A; Transistor Polarity:N Channel; DC Collector Current:422A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:175°C; Product Range:SEMITRANS 4 Series; SVHC:No SVHC (12-Jan-2017)