IGBT 3 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 100

NPT IGBT (Standard) MOSFET; CASE: SEMITOP 3; Current(A): 100

IGBT 3 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 200

IGBT 3 (Trench)

IGBT MODULE SIX 1.2KV 22A; Transistor Polarity:Six NPN; DC Collector Current:22A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:-; Product Range:- ;RoHS Compliant: Yes

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 3; Current(A): 15

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 3; Current(A): 25

IGBT 4 (Trench)

IGBT 3 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 50

IGBT 4 (Trench) MOSFET; CASE: SEMITOP 4; Current(A): 50

IGBT MODULE DUAL 1.2KV 80A; Transistor Polarity:Dual NPN; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

IGBT 4 (Trench)

IGBT MODULE QUAD 1.2KV 126A; Transistor Polarity:Quad NPN; DC Collector Current:126A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes

MOSFET; CASE: SEMITRANS M1; Current(A): 180

NPT IGBT (Standard) MOSFET; CASE: SEMITRANS 3; Current(A): 300

SKM50GD125D

IGBT MODULE N CH 1.2KV 160A; Transistor Polarity:N Channel; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

TRANSISTOR; Transistor Polarity:-; DC Collector Current:229A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:7Pins; Operating Temperature Max:175 C ;RoHS Compliant: Yes

IGBT MODULE DUAL N CH 1.2KV 200A; Transistor Polarity:Dual N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):3.3V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)

IGBT Module; Transistor Polarity:-; DC Collector Current:314A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:800mV; No. of Pins:7Pins; Operating Temperature Max:175 C ;RoHS Compliant: Yes