Discrete Diodes; Case: B3 ; Voltage: 600-1800(V)

Discrete Diodes; Case: E12 ; Voltage: 400-1600(V); Chip Type: Standard recovery

Discrete Diodes; Case: E14 ; Voltage: 400-1800(V); Chip Type: Standard recovery

Discrete Diodes; Case: E14 ; Voltage: 1200-1700(V); Chip Type: Fast recovery

Discrete Diodes; Case: E31 ; Voltage: 1200-1700(V); Chip Type: Fast recovery

Discrete Diodes; Case: B7 ; Voltage: 400-1600(V)

IGBT DRIV 1.2KV 1.4US MODULE; Driver Configuration:-; Peak Output Current:8A; Supply Voltage Min:14.4V; Supply Voltage Max:15.6V; Driver Case Style:Module; No. of Pins:-; Input Delay:1.4µs; Output Delay:1.4µs; Operating Temperature Min:-25°C; Operating Temperature Max:85°C; Packaging:Cut Tape; MSL:-; SVHC:No SVHC (15-Jun-2015); Device Type:IGBT

SKYPER 32 PRO R UL

Freewheeling Diodes CAL High Density; Current(A): 10

Freewheeling Diodes CAL I3 Fast; Current(A): 20

Freewheeling Diodes CAL I3 Fast; Current(A): 80

Freewheeling Diodes CAL High Density; Current(A): 150

Freewheeling Diodes CAL High Density; Current(A): 200

Freewheeling Diodes CAL I3 Fast; Current(A): 210

Freewheeling Diodes CAL I3 Fast; Current(A): 15

Freewheeling Diodes CAL High Density; Current(A): 20

Freewheeling Diodes CAL I3 Fast; Current(A): 25

Freewheeling Diodes CAL I3 Fast; Current(A): 150

Thyristor Corner Gate; Current(A): 125

Rectifier; Current(A): 170