SCRs 1400V 60A

Rectifiers 110 Amps 1200V

IGBT Modules IGBT Module H Bridge

Schottky Diodes & Rectifiers 100V 2X40A

Solid State Relays - PCB Mount SP, NO ISOPLUS-264

Bridge Rectifier Three Phase Standard 1.2kV Through Hole ISOPLUS i4-PAC™

Diode Array 1 Pair Common Cathode Standard 600V 120A Chassis Mount SOT-227-4, miniBLOC

MOSFET, N, RF, DE275; Drain Source Voltage Vds:125V; Continuous Drain Current Id:15A; Power Dissipation Pd:-; RF Transistor Case:DE-275; No. of Pins:6Pins; Operating Temperature Max:175°C; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:425pF; On Resistance Rds(on):300mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Max:6W; Pulse Current Idm:60A; Rise Time:4ns; Threshold Voltage Vgs:6.5V; Transistor Case Style:DE-275; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:125V; Voltage Vgs Rds on Measurement:15V

MOSFET, N, RF, TO-247AD; Drain Source Voltage Vds:600V; Continuous Drain Current Id:18A; Power Dissipation Pd:300W; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:TO-247AD; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:-; SVHC:No SVHC (12-Jan-2017); Alternate Case Style:SOT-249; Capacitance Ciss Typ:1930pF; On Resistance Rds(on):440mohm; Pulse Current Idm:90A; Rise Time:4ns; Termination Type:Through Hole; Threshold Voltage Vgs:4.25V; Transistor Case Style:TO-247AD; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:600V; Voltage Vgs Rds on Measurement:20V

MOSFET, N, ISOPLUS247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:4V; Power Dissipation Pd:310W; Transistor Case Style:ISOPLUS-247; No. of Pins:-; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Isolation Voltage:2.5kV; N-channel Gate Charge:36nC; Reverse Recovery Time trr Max:200ns; Rth:0.4; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Rds on Measurement:10V

IGBT, ISOPLUS220; Collector Emitter Saturation Voltage Vce(on):2.3V; Power Dissipation Pd:63W; Collector Emitter Voltage V(br)ceo:-; Transistor Case Style:ISOPLUS-220; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:28A; Fall Time tf:80ns; Junction to Case Thermal Resistance A:0.83°C/W; Pin Configuration:Copack (FRD); Rise Time:80ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

IGBT, ISOPLUS220; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:63W; Collector Emitter Voltage V(br)ceo:-; Transistor Case Style:ISOPLUS-220; MSL:-; SVHC:No SVHC (12-Jan-2017); Current Ic Continuous a Max:20A; Fall Time tf:35ns; Junction to Case Thermal Resistance A:2°C/W; Pin Configuration:Single; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

P-Channel 200V 26A (Tc) 300W (Tc) Surface Mount TO-263AA

THYRISTOR MODULE, 181A, 1.8KV;

Rectifiers

Discrete Semiconductor Modules 500 Amps 2200V

SCRs Phase Control Thyristor

Solid State SPST-NC (1 Form B) 4-SOP (0.150", 3.81mm)

Diode Array 1 Pair Series Connection Standard 2200V 708A Module

500V 11A 750 mOhm P-ch TO-268