Low Noise Receiver Amplifiers

Low Noise Receiver Amplifiers

Low Noise Receiver Amplifiers

Broadband, Low Noise Figure, Package Style: 70, 73/NA

Broadband, High Gain

Low Noise pHEMT Devices

pHEMT MM-Wave Applications & Power pHEMT Devices, Package Style: 70, 73/71

Broadband, Low Noise Figure, Package Style: 84, 70, 73/71

MOSFET N RF DE275; Drain Source Voltage Vds:200V; Continuous Drain Current Id:25A; Power Dissipation Pd:590W; Operating Frequency Min:-; Operating Frequency Max:100MHz; RF Transistor Case:DE-275; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:2500pF; On Resistance Rds(on):80mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Max:590W; Rise Time:5ns; Threshold Voltage Vgs:5.5V; Transistor Case Style:DE-275; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:200V; Voltage Vgs Rds on Measurement:15V

MOSFET N RF TO-247AD; Drain Source Voltage Vds:500V; Continuous Drain Current Id:12A; Power Dissipation Pd:180W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-247AD; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:1870pF; On Resistance Rds(on):400mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:180W; Rise Time:14ns; Termination Type:Through Hole; Threshold Voltage Vgs:5V; Transistor Case Style:TO-247AD; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:10V

MOSFET N RF TO-264; Drain Source Voltage Vds:500V; Continuous Drain Current Id:44A; Power Dissipation Pd:500W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:5500pF; On Resistance Rds(on):120mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:500W; Rise Time:18ns; Termination Type:Through Hole; Threshold Voltage Vgs:5V; Transistor Case Style:TO-264; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:10V

Switch Mode Z-MOS (Isolated TO-247), Package Style: ISOPLUS247B

Switch Mode Z-MOS (Isolated TO-247), Package Style: ISOPLUS247A

MOSFET N RF TO-264; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:21A; Power Dissipation Pd:500W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:5500pF; On Resistance Rds(on):500mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:500W; Rise Time:16ns; Termination Type:Through Hole; Threshold Voltage Vgs:5V; Transistor Case Style:TO-264; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:1kV; Voltage Vgs Rds on Measurement:10V

MOSFET N RF TO-264; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:24A; Power Dissipation Pd:560W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:6600pF; On Resistance Rds(on):390mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:560W; Rise Time:18ns; Termination Type:Through Hole; Threshold Voltage Vgs:5.5V; Transistor Case Style:TO-264; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:1kV; Voltage Vgs Rds on Measurement:10V

MOSFET N RF DE375; Drain Source Voltage Vds:1.2kV; Continuous Drain Current Id:8A; Power Dissipation Pd:880W; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:DE-375; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:1960pF; On Resistance Rds(on):2.1ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Max:880W; Rise Time:5ns; Threshold Voltage Vgs:6.5V; Transistor Case Style:DE-375; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:1.2kV; Voltage Vgs Rds on Measurement:20V

Linear Z-MOS, Package Style: ISOPLUS247A

High Voltage Power MOSFETs (>1200V), Package Style: TO-247

Polar Power Mosfets (150V To 300V) With Reduced Rds(On), Package Style: TO-268

High Voltage Power Mosfets (>1200V), Package Style: TO-264