High Linearity Driver Amplifiers

Broadband General Purpose Amplifiers

Low Noise Receiver Amplifiers

Low Noise Receiver Amplifiers

Low Noise Receiver Amplifiers

Low Noise Receiver Amplifiers

Low Noise Receiver Amplifiers

Low Noise Receiver Amplifiers

pHEMT MM-Wave Applications & Power pHEMT Devices, Package Style: 71

Broadband, High Gain

Low Noise pHEMT Devices

Broadband, Medium Power, Package Style: 71

pHEMT MM-Wave Applications & Power pHEMT Devices, Package Style: 70, 73/71

Broadband, High Gain, Package Style: 70, 73/71

RF MOSFET N CHANNEL 500V DE-275; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation Pd:590W; Operating Frequency Min:-; Operating Frequency Max:100MHz; RF Transistor Case:DE-275; No. of Pins:6Pins; Operating Temperature Max:175°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Transistor Polarity:N Channel; Transistor Type:RF MOSFET

DE Series (DE Package), Package Style: 275x2

MOSFET N RF TO-247AD; Drain Source Voltage Vds:500V; Continuous Drain Current Id:21A; Power Dissipation Pd:300W; Operating Frequency Min:-; Operating Frequency Max:500kHz; RF Transistor Case:TO-247AD; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:2600pF; On Resistance Rds(on):250mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:300W; Rise Time:12ns; Termination Type:Through Hole; Threshold Voltage Vgs:5.5V; Transistor Case Style:TO-247AD; Transistor Polarity:N Channel; Transistor Type:RF MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:10V

F Series (Industry Standard Packages), Package Style: TO-268

DE Series (DE Package), Package Style: 375

F Series (Industry Standard Packages), Package Style: PLUS247