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IGBT, 1.2KV, 175A, 650W, TO-268HV;

MOSFET, N, ISOPLUS220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:300W; Transistor Case Style:ISOPLUS-220; No. of Pins:3Pins; Operating Temperature Max:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Isolation Voltage:2.5kV; N-channel Gate Charge:36nC; Reverse Recovery Time trr Max:80ns; Rth:0.5; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Rds on Measurement:10V

MOSFET, N, ISOPLUS220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:300W; Transistor Case Style:ISOPLUS-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Isolation Voltage:2.5kV; N-channel Gate Charge:44nC; Reverse Recovery Time trr Max:80ns; Rth:0.5; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Rds on Measurement:10V

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