Diode Hyper Fast Recovery Rectifier 600V 8A 2-Pin ITO-220AC Tube

Transistor MOSFET N-Channel 20V 0.3A 3-Pin SOT523 T/R

MOSFET BVDSS 8V24V SOT23 TR 3K

SURGE PROTECTION PP X1-DFN1006-2(TYPE SA) T&R 10K

Diode Hyper Fast Recovery Rectifier 600V 8A 2-Pin TO-220AC Tube

Crystal 40MHz 10pF 4-Pin SMD T/R

Analog Switch 2-Channel SPDT 10-Pin UQFN T/R

TRANSISTOR, NPN MLP-322; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):320mV; Continuous Collector Current Ic Max:4A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:4A; Current Ic hFE:200mA; Device Marking:SC; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Power Dissipation Ptot Max:1.5W; Pulsed Current Icm:6A; SMD Marking:SC; Termination Type:Surface Mount Device; Transistor Type:Power Bipolar; Voltage Vcbo:100V

MOSFET, P E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A

MOSFET, N SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:330mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:330mW; Pulse Current Idm:3A; SMD Marking:MZ; Tape Width:8mm; Termination Type:Surface Mount Device; Voltage Vgs th Max:3V

TRANSISTOR, NPN SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation Pd:330mW; DC Collector Current:200mA; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:50MHz; Hfe Min:40; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:350mW; SMD Marking:3E; Tape Width:8mm; Termination Type:Surface Mount Device; Transistor Type:General Purpose; Voltage Vcbo:300V

IC, V REG +6.0V, 78L06, TO-92-3; Adjustable Output Voltage Min:-; Adjustable Output Voltage Max:-; Input Voltage Min:8V; Input Voltage Max:20V; Output Type:Fixed; Linear Regulator Case Style:TO-92; No. of Pins:3Pins; Operating Temperature Min:-55°C; Operating Temperature Max:125°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Base Number:78; Dropout Voltage Vdo:1.6V; IC Generic Number:78L06; Operating Temperature Range:-55°C to +125°C; Operating Voltage Tolerance +:2.5%; Output Current Max:0.2A; Output Voltage:6V; Voltage:6V; Voltage Regulator Type:Positive Fixed

TRANSISTOR, PNP E LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:120MHz; Power Dissipation Pd:710mW; DC Collector Current:-3.5A; DC Current Gain hFE:100hFE; Transistor Case Style:E-Line; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):210mV; Continuous Collector Current Ic Max:3.5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:3.5A; Current Ic Fall Time Measurement:100mA; Current Ic hFE:4A; Device Marking:X5T951; Fall Time @ Ic:370ns; Gain Bandwidth ft Typ:120MHz; Hfe Min:65; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:710mW; Pulsed Current Icm:15A; Transistor Type:General Purpose; Turn Off Time:370ns; Voltage Vcbo:100V

LSC VREG SHUNT REGULATOR SSOT23 T&R 3K

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:20V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Collector Current Ic Max:4.5A; Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4.5A; Current Ic PNP Device:-3.5A; Device Marking:DBB; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DB2; Transistor Type:Power Bipolar; Voltage Vcbo:40V; Voltage Vce Sat @ Ic NPN Max:0.27V; Voltage Vce Sat @ Ic PNP Max:-0.3V; Voltage Vceo NPN:20V; Voltage Vceo PNP:-20V

TRANSISTOR, DUAL NPN/PNP MLP-832; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:50V; Transistor Case Style:MLP; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Continuous Collector Current Ic Max:4A; Current Ic Hfe NPN Device:200mA; Current Ic Hfe PNP Device:-100mA; Current Ic NPN Device:4A; Current Ic PNP Device:-3A; Device Marking:DC3; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:100MHz; Gain Bandwidth ft Typ:165MHz; Hfe Min:300; Hfe NPN Device @ IC Min:300; Hfe PNP Device @ IC Min:300; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Power Dissipation Ptot Max:1.5W; SMD Marking:DC3; Transistor Type:Power Bipolar; Voltage Vcbo:100V; Voltage Vce Sat @ Ic NPN Max:0.32V; Voltage Vce Sat @ Ic PNP Max:-0.37V; Voltage Vceo NPN:50V; Voltage Vceo PNP:-40V

SOT363 / General Purpose Transistor

Packet Switch H-FCBGA190190-324 TRAY 84PCS

LCD/OLED BIAS BOOST CONVERTER, SMD; Topology:Boost (Step Up); Input Voltage Min:2.5V; Input Voltage Max:5.5V; No. of Outputs:1Outputs; DC / DC Converter IC Case:SC-70; No. of Pins:6Pins; Output Current:250mA; Output Voltage Min:-; Output Voltage Max:28V; Switching Frequency:1MHz; Operating Temperature Max:85°C; Product Range:-; Automotive Qualification Standard:-; RoHS Phthalates Compliant:Yes; MSL:-; SVHC:No SVHC (15-Jan-2018); Base Number:1601; Frequency:600kHz; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to +85°C; Output Current Max:250mA; Output Voltage:5.5V; Supply Voltage Min:2.5V; Termination Type:Surface Mount Device

LCD/OLED BIAS BOOST CONVERTER, SMD; Input Voltage Max:5.5V; No. of Outputs:1Outputs; No. of Pins:10Pins; Output Voltage Max:28V; Operating Temperature Max:70°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Base Number:1600; Frequency:500kHz; IC Temperature Range:Commercial; Operating Temperature Min:0°C; Operating Temperature Range:0°C to +70°C; Output Current Max:10mA; Output Voltage:30V; Supply Voltage Max:5.5V; Supply Voltage Min:1.6V; Termination Type:Surface Mount Device