Description

TRANSISTOR, PNP E LINE; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:120MHz; Power Dissipation Pd:710mW; DC Collector Current:-3.5A; DC Current Gain hFE:100hFE; Transistor Case Style:E-Line; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:-; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):210mV; Continuous Collector Current Ic Max:3.5A; Current Ic @ Vce Sat:4A; Current Ic Continuous a Max:3.5A; Current Ic Fall Time Measurement:100mA; Current Ic hFE:4A; Device Marking:X5T951; Fall Time @ Ic:370ns; Gain Bandwidth ft Typ:120MHz; Hfe Min:65; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:710mW; Pulsed Current Icm:15A; Transistor Type:General Purpose; Turn Off Time:370ns; Voltage Vcbo:100V