Description

Receiver Front End, Dual-Channel, 1.8 GHz to 2.8 GHz Features: Integrated dual-channel RF front end 2-stage LNA and high power SPDT switch On-chip bias and matching Single-supply operation Gain High gain mode: 35 dB typical at 2.3 GHz Low gain mode: 17 dB typical at 2.3 GHz Low noise figure High gain mode: 1.4 dB typical at 2.3 GHz Low gain mode: 1.4 dB typical at 2.3 GHz High isolation Between RxOUT-ChA and RxOUT-ChB: 50 dB typical Between TERM-ChA and TERM-ChB: 62 dB typical Low insertion loss: 0.6 dB typical at 2.3 GHz High power handling at TCASE = 105°C Full lifetime LTE average power (9 dB PAR): 40 dBm Single event (<10 sec operation) LTE average power (9 dB PAR): 43 dBm High OIP3: 32 dBm typical Power-down mode and low gain mode for LNA Low supply current High gain mode: 85 mA typical at 5V Low gain mode: 35 mA typical at 5 V Power-down mode: 12 mA typical at 5 V Positive logic control 6 mm × 6 mm, 40-lead LFCSP