Description

Dual-Channel, 2.4 GHz to 4.2 GHz Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power SPDT switch On-chip bias and matching Single supply operation Gain High gain mode: 32 dB typical at 3.6 GHz Low gain mode: 16 dB typical at 3.6 GHz Low noise figure High gain mode: 1.45 dB typical at 3.6 GHz Low gain mode: 1.45 dB typical at 3.6 GHz High isolation RXOUT-CHA and RXOUT-CHB: 47 dB typical TERM-CHA and TERM-CHB: 52 dB typical Low insertion loss: 0.65 dB typical at 3.6 GHz High power handling at TCASE = 105°C Full lifetime LTE average power (9 dB PAR): 40 dBm Single event (<10 sec operation) LTE average power (9 dB PAR): 43 dBm High OIP3: 32 dBm typical Power-down mode and low gain mode for LNA Low supply current High gain mode: 86 mA typical at 5 V Low gain mode: 36 mA typical at 5 V Power-down mode: 12 mA typical at 5 V Positive logic control 6 mm × 6 mm, 40-lead LFCSP package