Description

Dual-Channel, 3.3 GHz to 4.0 GHz, 20 W Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power silicon SPDT switch On-chip bias and matching Single supply operation Gain High gain mode: 33 dB typical at 3.6 GHz Low gain mode: 16 dB typical at 3.6 GHz Low noise figure High gain mode: 1.0 dB typical at 3.6 GHz Low gain mode: 1.0 dB typical at 3.6 GHz High isolation RXOUT-CHA and RXOUT-CHB: 45 dB typical TERM-CHA and TERM-CHB: 60 dB typical Low insertion loss: 0.45 dB typical at 3.6 GHz High power handling at TCASE = 105°C Full lifetime LTE average power (9 dB PAR): 43 dBm High OIP3 (high gain mode): 32 dBm typical Power-down mode and low gain mode for LNA Low supply current High gain mode: 86 mA typical at 5V Low gain mode: 36 mA typical at 5V Power-down mode: 12 mA typical at 5V Positive logic control 6 mm × 6 mm, 40-lead LFCSP package Pin compatible with the ADRF5545A, 10 W version