Description

Dual-Channel, 3.3 GHz to 4.0 GHz, 20 W Receiver Front End Features: Integrated dual-channel RF front end 2-stage LNA and high power silicon SPDT switch On-chip bias and matching Single-supply operation High power handling at TCASE = 105°C LTE average power (9 dB PAR) full lifetime: 43 dBm Gain High gain mode: 36 dB typical at 3.6 GHz Low gain mode: 17 dB typical at 3.6 GHz Low noise figure High gain mode: 1.05 dB typical at 3.6 GHz Low gain mode: 1.05 dB typical at 3.6 GHz High isolation RXOUT-CHA and RXOUT-CHB: 47 dB typical TERM-CHA and TERM-CHB: 75 dB typical Low insertion loss: 0.5 dB typical at 3.6 GHz High OIP3: 35 dBm typical Power-down mode and low gain mode Low supply current High gain mode: 95 mA typical at 5 V Low gain mode: 48 mA typical at 5 V Power-down mode: 13 mA typical at 5 V Positive logic control 6 mm × 6 mm, 40-lead LFCSP package Pin compatible with the ADRF5515 and the ADRF5519, and the 10 W versions, ADRF5545A and ADRF5549