Description

Die on Carrier, Silicon SPDT Switch, 100 MHz to 60 GHz Features: Ultrawideband frequency range: 100 MHz to 60 GHz Reflective design Bond pads for wire bond and ribbon bond Low insertion loss 1.0 dB typical up to 18 GHz 1.3 dB typical up to 44 GHz 1.5 dB typical up to 55 GHz High input linearity P1dB: 28 dBm typical IP3: 50 dBm typical High RF power handling Through path: 27 dBm up to 40 GHz Hot switching: 27 dBm up to 40 GHz No low frequency spurious signals RF settling time (50% VCTRL to 0.1 dB of final RF output): 17 ns 14-pad, 2.471 mm x 2.571 mm, die on carrier [CHIP]