Description

0 Hz/DC to 13 GHz, 2.5 kV HBM ESD, SP4T, MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 10.8 GHz (typical) for RF1, RF4 13 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.45 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IP3: 67 dBm (typical) RF input power: 32 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 µs (maximum) ESD HBM rating 5 kV for RF1 to RF4 and RFC pins 2.5 kV for all other pins Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS/LVTTL compatible Parallel and SPI Interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins 5 mm × 4 mm × 1.45 mm, 24-lead LFCSP Operating temperature range: 0°C to 85°C