GaAs, pHEMT, MMIC,1/2 W, 20 GHz to 44 GHz, Power Amplifier Features: Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) PSAT: 30 dBm (typical at 20 GHz to 34 GHz) Gain: 15 dB (typical at 34 GHz to 44 GHz) IP3: 40 dBm (typical) Supply voltage: 5 V at 600 mA Die size: 2.75 mm × 1.805 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

GaAs, pHEMT, MMIC,1 W Power Amplifier, 18 GHz to 44 GHz Features: Output P1dB: 31 dBm typical at 22 GHz to 36 GHz PSAT: 32 dBm typical at 22 GHz to 36 GHz Gain: 21.5 dB typical at 22 GHz to 36 GHz Output IP3: 41 dBm typical at 22 GHz to 44 GHz Supply voltage: 5 V typical at 1400 mA maximum 50 matched input and output Die size: 3.610 mm × 3.610 mm × 0.102 mm

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 31 dBm (1 W) Power Amplifier Features:ADPA7008 Chip Features Output P1dB: 30.5 dBm typical at 22 GHz to 42 GHz PSAT: 31 dBm typical at 22 GHz to 42 GHz Gain: 18 dB typical at 22 GHz to 42 GHz Input return loss: 22 dB typical at 22 GHz to 42 GHz Output return loss: 23 dB typical at 22 GHz to 42 GHz Output IP3: 38 dBm typical at 22 GHz to 42 GHz Supply voltage: 5 V typical at 1500 mA 50 Ω matched input and output Die size: 3.610 mm × 3.610 mm × 0.102 mmADPA7008AEHZ Features Output P1dB: 30 dBm typical at 22 GHz to 40 GHz PSAT: 31 dBm typical at 22 GHz to 40 GHz Gain: 17.5 dB typical at 22 GHz to 40 GHz Input return loss: 12 dB typical at 22 GHz to 40 GHz Output return loss: 9.5 dB typical at 22 GHz to 40 GHz Output IP3: 37 dBm typical at 22 GHz to 40 GHz Supply voltage: 5 V typical at 1500 mA 50 Ω matched input and output 18-terminal, 7 mm × 7 mm, ceramic leadless chip carrier with heat sink [LCC_HS] Integrated power detector

20 GHz to 54 GHz, GaAs, pHEMT, MMIC, 29 dBm (0.5 W) Power Amplifier Features: Output P1dB: 28.5 dBm typical at 24 GHz to 36 GHz PSAT: 29 dBm typical at 24 GHz to 36 GHz Gain: 19.5 dB typical at 24 GHz to 36 GHz Input return loss: 17.5 dB typical at 24 GHz to 36 GHz Output return loss: 22.0 dB typical at 24 GHz to 36 GHz Output IP3: 35 dBm typical at 24 GHz to 36 GHz Supply voltage: 5 V typical at 750 mA 50 Ω matched input and output Die size: 2.750 mm × 1.845 mm× 0.102 mm

Integrated Optical Module with Ambient Light Rejection and Two LEDs Features: 3.8 mm × 5.0 mm × 0.9 mm module with integrated optical components 2 green LEDs, 2 PDs with IR cut filter 2 external sensor inputs 3, 370 mA LED drivers 20-bit burst accumulator enabling 20 bits per sample period On-board sample to sample accumulator enabling up to 27 bits per data read Custom optical package made to work under a glass window Optimized SNR for signal limited cases I2C or SPI communications

Ultralow Noise, Low Power Current Amplifier Features: Ultralow noise, low power current amplifier 80 fA/√Hz (typical) noise floor 140 μA (typical) of supply current when active (EE = 0 μW/cm2) 100 nA (typical) of supply current in standby Flexible output configuration Optimized for pulsed systems Nominal linear output: 240 μA Space-saving 2 mm × 2 mm LFCSP package

Ultracompact, Precision 2.5 V Voltage Reference Features: Ultracompact SC70 and TSOT packages Low temperature coefficient 8-lead SOIC: 3 ppm/°C typical 5-lead SC70: 9 ppm/°C maximum 5-lead TSOT: 9 ppm/°C maximum Initial accuracy ±0.1% No external capacitor required Low noise 10 μV p-p, 0.1 Hz to 10.0 Hz (ADR02) Wide operating range ADR01: 12.0 V to 36.0 V ADR02: 7.0 V to 36.0 V ADR03: 4.5 V to 36.0 V ADR06: 5.0 V to 36.0 V High output current 10 mA Wide temperature range: –40°C to +125°C ADR01/ADR02/ADR03 pin compatible to industry-standard REF01/REF02/REF03 ADR01, ADR02, ADR03 and ADR06 SOIC (A grade) qualified for automotive applications ADR03-EP supports defense and aerospace applications (AQEC standard) Download ADR03-EP data sheet (pdf) Military temperature range −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Product change notification Qualification data available on request

High Temperature, Low Drift, Micropower, 2.5V Reference Features: Download ADR225-KGD-DIE Data Sheet. Available as Known Good Die and fully guaranteed in data sheet specifications Extreme high temperature operation −40°C to +210°C, 8-lead FLATPACK −40°C to +175°C, 8-lead SOIC Temperature coefficient 40 ppm/°C, 8-lead FLATPACK 10 ppm/°C, 8-lead SOIC High output current: 10 mA Low supply current: 50 µA maximum Initial accuracy: ±0.4% (±10 mV maximum), 8-lead SOIC Low dropout voltage Wide supply range: 3.3 V to 16 V

Ultralow Noise, LDO XFET 2.5V Voltage Reference w/Current Sink and Source Features: Ultralow noise (0.1 Hz to 10 Hz) ADR440: 1 μV p-p ADR441: 1.2 μV p-p ADR443: 1.4 μV p-p ADR444: 1.8 μV p-p ADR445: 2.25 μV p-p Superb temperature coefficient A Grade: 10 ppm/°C B Grade: 3 ppm/°C Low dropout operation (supply voltage headroom): 500 mV Input range: (VOUT + 500 mV) to 18 V High output source and sink current +10 mA and −5 mA, respectively Wide temperature range: −40°C to +125°CADR441-EP supports defense and aerospace applications (AQEC standard) Download ADR441-EP Data Sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/18620 DSCC Drawing Number

Ultra-Low-Noise, High-Accuracy 2.5V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 5.0V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

CMOS, 2.5 Low Voltage Differential 8 Channel Multiplexer Features: +1.8 V to +5.5 V single supply ±2.5 V dual supply 2.5 ON resistance 0.5 ON resistance flatness 100 pA leakage currents 40 ns switching times Differential 8-to-1 multiplexer 28-lead TSSOP package Low-power consumption TTL/CMOS-compatible inputs

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch Features: Bandwidth: 300 MHz Low Insertion Loss and on Resistance: 5 typical On Resistance Flatness: 0.68 Typical Single 3 V/5 V Supply Operation Low Quiescent Supply Current: 1 nA Typical TTL/CMOS Compatible Fast switching times: tON, 7 ns; tOFF, 5 ns ESD protection 2 kV human body model (HBM) 200 V machine model (MM) 1 kV field-induced charged device model (FICDM)

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Features: Wideband switch: −3 dB at 4 GHz Absorptive/reflective switches High off isolation (43 dB at 1 GHz) Low insertion loss (0.8 dB at 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 8-lead MSOP and tiny 3 mm × 3 mm LFCSP Low power consumption (<1 µA)