Description

The HMC7229LS6 is a four stage, gallium arsenide (GaAs),pseudomorphic high electron mobility transfer (pHEMT),monolithic microwave integrated circuit (MMIC), 1 W poweramplifier, with an integrated temperature compensated on-chippower detector that operates between 37 GHz to 40 GHz. TheHMC7229LS6 provides 24 dB of gain and 32 dBm of saturatedoutput power at 18% PAE at 39 GHz from a 6 V supply. With anexcellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linearapplications such as high capacity, point to point or multipointradios or VSAT/SATCOM applications demanding 32 dBm ofefficient saturated output power. The radio frequency (RF)input/outputs are internally matched and dc blocked for ease ofintegration into higher level assemblies. The HMC7229LS6 ishoused in a ceramic, 6 mm ? 6 mm, high frequency, air cavitypackage that exhibits low thermal resistance and is compatiblewith surface-mount manufacturing techniques.Applications Point to point radios Point to multipoint radios Very small aperture terminal (VSAT) and satellite communications (SATCOM)

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Part number: EVAL01-HMC7229LS6

More details from Analog Devices Inc.