The HMC7885 is a 32 W gallium nitride (GaN), monolithicmicrowave integrated circuit (MMIC) power amplifier (PA)module that operates between 2 GHz and 6 GHz, and is providedin an 18-lead hermetically sealed module. The amplifier typicallyprovides 21 dB of small signal gain and 45 dBm of saturated radiofrequency (RF) output power. The amplifier draws 2200 mA ofquiescent current (IDD) from a 28 V dc supply. The RF input andoutput are dc blocked and matched to 50 ? for ease of use.Applications Test and measurement equipment Communications Electronic warfare (EW) Military Traveling wave tube (TWT) replacements SATCOM Commercial and military radars

The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 25% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797APM5E is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797APM5E amplifier I/Os are internally matched to 50 ? facilitating integration into mutli-chip-modules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.Applications Test Instrumentation Military & Space Fiber Optics

The HMC802ALP3E is a broadband bidirectional 1-bitGaAs IC digital attenuator in a low cost leadless sur-face mount package. This single positive control linedigital attenuator utilizes off chip AC ground capac-itors for near DC operation, making it suitable for awide variety of RF and IF applications. Covering DCto 10 GHz, the insertion loss is less than 3 dB typicaland attenuation accuracy is excellent at ?0.6 dB typ-ical. The attenuator also features a high IIP3 of +55dBm. One TTL/CMOS control input is used to selectthe attenuation state and a single Vdd bias of +5V isrequired. Applications Test equipment and sensors ISM, MMDS, WLAN,?WiMAX, WiBro Microwave radio & VSAT Cellular infrastructure

The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment

The HMC832A is a 3.3 V, high performance, wideband, fractional-N, phase-locked loop (PLL) that features an integrated voltage controlled oscillator (VCO) with a fundamental frequency of 1500 MHz to 3000 MHz and an integrated VCO output divider (divide by 1, 2, 4, 6, ? 62) that enables the HMC832A to generate continuous frequencies from 25 MHz to 3000 MHz. The integrated phase detector (PD) and ?-? modulator, capable of operating at up to 100 MHz, permit wider loop bandwidths and faster frequency tuning with excellent spectral performance.Industry leading phase noise and spurious performance, across all frequencies, enable the HMC832A to minimize blocker effects, and to improve receiver sensitivity and transmitter spectral purity. A low noise floor (?160 dBc/Hz) eliminates any contribution to modulator/mixer noise floor in transmitter applications.The HMC832A is footprint compatible to the market leading HMC830 PLL with an integrated VCO. It features 3.3 V supply and an innovative programmable performance technology that enables the HMC832A to tailor current consumption and corresponding noise floor performance to individual applications by selecting either a low current consumption mode or a high performance mode for an improved noise floor performance.Additional features of the HMC832A include 12 dB of RF output gain control in 1 dB steps; an output mute function to automatically mute the output during frequency changes when the device is not locked; selectable output return loss; programmable differential or single-ended outputs, with the ability to select either output in single-ended mode; and a ?-? modulator exact frequency mode that enables users to generate output frequencies with 0 Hz frequency error; and a register configurable 3.3 V or 1.8 V serial port interface (SPI).Applications Cellular infrastructure Microwave radios WiMax, WiFi Communications test equipment CATV equipment DDS replacement Military Tunable reference sources for spurious-free performance

The HMC8500PM5E is a gallium nitride (GaN), broadbandpower amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneousbandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave(CW) applications, such as wireless infrastructure, radars,public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using lowcost, surface-mount components and is available in a compactLFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification

The HMC881A is a monolithic microwave integrated circuit (MMIC) low-pass filter that features a user-selectable cutoff frequency. The cutoff frequency can be varied from 2.4 GHz to 4 GHz by applying a single analog tuning voltage between 0 V and 14 V. This low-pass filter provides a low 3 dB insertion loss, 16.5 dB return loss, and 1.35 ? f3dB stopband attenuation of >20 dB. This tunable filter can be used as a much smaller alternative to physically large switched filter banks and cavity tuned filters. The HMC881A has excellent microphonics due to the monolithic design, and provides a dynamically adjustable solution in advanced communications applications. The low-pass tunable filter is packaged in a RoHS compliant 5 mm ? 5 mm LFCSP package.Applications Testing and measurement equipment Military radar and electronic warfare/electronic countermeasures (ECMs) Satellite communication and space Industrial and medical equipment

The HMC892ALP5E is a tunable band-pass filter that features auser selectable pass-band frequency. The 3 dB filter bandwidth isapproximately 8.7%. The 20 dB filter bandwidth is approximately23.8%. The center frequency can be varied between 3.45 GHzand 6.25 GHz by applying an analog tuning voltage between 0 Vand 14 V.This tunable filter can be used as a smaller alternative tophysically large switched filter banks and cavity tuned filters.The HMC892ALP5E has excellent microphonics due to themonolithic design and provides a dynamically adjustablesolution in advanced communications applications. Applications Test and measurement equipment Military radar and electronic warfare (EW)/electronic countermeasures (ECM) Satellite communications (SATCOM) and space Industrial and medical equipment

The HMC908A is a compact, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), inphase/quadrature (I/Q) downconverter in a leadless, RoHS compliant ceramic leadless chip carrier. This device provides a small signal conversion gain of 11 dB with a noise figure of 2 dB and 25 dB of image rejection at 100 MHz. The HMC908A utilizes a low noise amplifier (LNA) followed by an image rejection mixer that is driven by a local oscillator (LO) buffer amplifier. The image rejection mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The HMC908A is a much smaller alternative to hybrid style image rejection mixer downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.Applications Point to point radios Point to multipoint radios and very small aperture terminals (VSATs) Test equipment and sensors Military end use

The HMC951A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) downconverter in a RoHS compliant package that operates from 5.6 GHz to 8.6 GHz. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and an image rejection of 32 dBc. The HMC951A uses a low noise amplifier (LNA) followed by an image mixer that is driven by a local oscillator (LO) buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA and removes thermal noise at the image frequency. The IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC951A is a smaller alternative to hybrid style, single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.The HMC951A is available in 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and operates over the ?40?C to +85?C temperature range. An evaluation board for the HMC951A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

The HMC973ALP3E is an absorptive Voltage VariableAttenuator (VVA) which operates from 0.5 to 5 GHzand is ideal in designs where an analog DC controlsignal must be used to control RF signal levels overa 26 dB amplitude range. It features a shunt-typeattenuator controlled by an analog voltage, Vctrl.The HMC973ALP3E is an unidirectional device withoptimum linearity performance achieved when the RFinput signal is applied to the RFIN package lead. TheHMC973ALP3E is housed in a RoHS compliant 3x3mm QFN leadless package.Applications Point-to-point radio Cellular/3G & WiMAX/4G infrastructure Test instrumentation Microwave sensors? Military, ECM & radar

The EV-21569-SOM with low-cost evaluation and rapid prototyping of the ADSP-2156× Family (ADSP-21562/21563/21565/21566/21567/21569) of SHARC+ audio processors. It features the processor, memory, and power portions of the design and provides an easy-to-use plug-n-play reference design with all the key interfaces made available on three connectors for marrying to either the EV-SOMCRR-EZKIT carrier board or a custom carrier board. The EV-21569-SOM and EV-SOMCRR-EZKIT boards may be purchased as a bundle (EV-21569-EZKIT), providing fast and easy evaluation of the processor core and system peripherals/interfaces. The EV-21569-SOM module requires the CrossCore® Embedded Studio (CCES) development tools to enable developers to achieve faster time to market. The development environment aids advanced application code development and debug, such as: Create, compile, assemble, and link application programs written in C++, C, and assembly Load, run, step, halt, and set breakpoints in application programs Read and write data and program memory Read and write core and peripheral registers When used without the EV-SOMCRR-EZKIT carrier board, the EV-21569-SOM board requires an external in-circuit emulator (ICE-1000 or ICE-2000) be connected to the JTAG header.

The EV-21593-SOM enables evaluation and rapid prototyping of designs featuring the ADSP-2159x Family (ADSP-21591/ADSP-21593) of SHARC audio processors. It provides an easy-to-use plug-n-play reference design with expansion capabilities to interface to custom hardware ahead of the release of the processor itself. When the EV-21593-SOM board is plugged into the EV-SOMCRR-EZKIT carrier board, the resulting EZ-KIT® evaluation system (EV-21593-EZKIT) can be used for fast and easy evaluation of the processor core and system peripherals/interfaces. The EV-21593-SOM enables rapid prototyping for a wide range of applications, including immersive 3D sound and personal audio zones (PAZ), automotive active and road noise cancellation (ANC/RNC), voice-based user-interfaces and in-car communications (ICC), engine sound synthesis (ESS) and electric vehicle warning sound systems (EVWSS/AVAS). Additional applications include professional audio and soundbars / home AVRs (with 3D Object and Multi-Channel Audio) and enhanced conferencing systems. ADI offers several software modules (e.g., AEC/NR, microphone beamforming, pitch shifting, harmonic generators, wave players etc.), as well as complete software solutions that can be licensed, where users can develop/evaluate their audio and voice processing applications. ADI also offers 3rd party surround sound solutions that can be licensed on ADI’s SHARC processor families. Please visit ADI’s Software Solutions page for more information. The EV-21593-SOM module utilizes the CrossCore® Embedded Studio (CCES) development tools to enable developers to achieve faster time to market. The development environment aids advanced application code development and debug, such as: Create, compile, assemble, and link application programs written in C++, C, and assembly Load, run, step, halt, and set breakpoints in application programs Read and write data and program memory Read and write core and peripheral registers

The HMC1119 is a broadband, highly accurate, 7-bit digitalattenuator, operating from 0.1 GHz to 6.0 GHz with 31.5 dBattenuation control range in 0.25 dB steps.The HMC1119 is implemented in a silicon process, offeringvery fast settling time, low power consumption, and high ESDrobustness. The device features safe state transitions and isoptimized for excellent step accuracy and high linearity overfrequency and temperature range. The RF input and output areinternally matched to 50 ? and do not require any externalmatching components. The design is bidirectional; therefore,the RF input and output are interchangeable.The HMC1119 has an on-chip regulator that can support a widesupply operating range from 3.3 V to 5.0 V with no performancechange in electrical characteristics. The HMC1119 incorporates adriver that supports serial (3-wire) and parallel controls of theattenuator.The HMC1119 comes in a RoHS-compliant, compact, 4 mm ?4 mm LFCSP package.A fully populated evaluation board is available.Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors IF and RF designs

The ADF4002 frequency synthesizer is used to implement local oscillators in the up-conversion and down-conversion sections of wireless receivers and transmitters. It consists of a low-noise digital phase frequency detector (PFD), a precision charge pump, a programmable reference divider and programmable N divider. The 14-bit reference counter (R counter), allows selectable REFIN frequencies at the PFD input.A complete phase-locked loop (PLL) can be implemented if the synthesizer is used with an external loop filter and voltage controlled oscillator (VCO). In addition, by programming R and N to 1, the device can be used as a standalone PFD and charge pump.The ADF4002-EP supports defense and aerospace applications (AQEC standard).

The ADL5920 is an ultrawideband, bidirectional detector that simultaneously measures forward and reverse rms power levels in a signal path, along with the return loss.The forward and reverse power traveling through the integrated bidirectional bridge is measured using two 50 dB linear in dB rms detectors. The detector output voltages, available at the VRMSF and VRMSR pins, are proportional to the forward and reflected power in dBm. A third, differential, output produces a voltage proportional to the return loss (reflection coefficient) in dB, closely related to the voltage standing wave ratio (VSWR). The common-mode level of this output is externally adjustable through the VOCM pin.The primary transmission line of the bidirectional bridge, from RFIN to RFOUT (or vice versa) is dc-coupled and allows small amounts of dc bias current through the bridge. When dc-coupled to source and load, the positive and negative supply pins of the ADL5920 must be connected to +5 V and ?2.5 V, respectively (relative to the dc voltage at RFIN and RFOUT). The internal detector circuitry is also dc-coupled to the directional bridge to support measurements down to 9 kHz.The maximum input signal on each of the RF ports (RFIN and RFOOUT) is 30 dBm for open and shorted terminations and 33 dBm for a matched termination.The ADL5920 draws 160 mA from a 5 V supply and has a low power, power-down mode controlled through the PWDN/TADJS pin.The device is supplied in a 32-lead, 5 mm ? 5 mm LFCSP and is specified for ambient operating temperatures in the ?40?C to +85?C range.Multifunction pin names may be referenced by their relevant function only.Applications Industrial metering Broadband inline power and return loss measurement Transmit power control and automatic level control in wireless transmitters, signal generators, network analyzers, and wireless communications testers Condition based monitoring of system modules, cables, and connectors

The ADL6010 is a versatile, broadband envelope detector covering the microwave spectrum. It provides state-of-the-art accuracy with very low power consumption (8 mW) in a simple, easy to use 6-lead format. The output is a baseband voltage proportional to the instantaneous amplitude of the radio frequency (RF) input signal. It exhibits minimal slope variation of the RF input to envelope output transfer function from 0.5 GHz to 43.5 GHz.The detector cell uses a proprietary eight Schottky diode array followed by a novel linearizer circuit that creates a linear voltmeter with an overall scaling factor (or transfer gain) of nominally ?2.2 relative to the voltage amplitude of the input.Although the ADL6010 is not inherently a power responding device, it remains convenient to specify the input in this way. Thus, the permissible input power, relative to a 50 ? source input impedance, ranges from ?30 dBm to +15 dBm. The corresponding input voltage amplitudes of 11.2 mV to 1.8 V generate quasi-dc outputs from about 25 mV to 4 V above common (COMM).A subtle aspect of the balanced detector topology is that no even-order distortion, caused by nonlinear source loading, occurs at the input. This is an important benefit in applications where a low ratio coupler is used to extract a signal sample and is a significant improvement over traditional diode detectors.The power equivalent of a fluctuating RF input amplitude can be extracted by the addition of an rms-to-dc converter IC. Alternatively, the baseband output can be applied to a suitably fast analog-to-digital converter (ADC) and the rms value (and other signal metrics, such as peak to average ratio) calculated in the digital domain.The output response accuracy is insensitive to variation in the supply voltage, which can range from 4.75 V to 5.25 V. The ultralow power dissipation contributes to its long-term stability.The ADL6010ACPZN is specified for operation from ?40?C to +85?C, and the ADL6010SCPZN is specified for operation from ?55?C to +125?C. Both are available in a 6-lead, 2 mm ? 2 mm LFCSP package.Applications Microwave point to point links Microwave instrumentation Radar-based measurement systems

The ADL6317 is a transmit variable gain amplifier (VGA) that provides an interface from radio frequency digital-to-analog converters (RF DACs), transceivers, and systems on a chip (SoC) to power amplifiers. Integrated balun and hybrid couplers allow high performance RF capability in the frequency range of 1500 MHz to 3000 MHz.To optimize performance vs. power level, the ADL6317 includes a voltage variable attenuator (VVA), high linearity amplifiers, and a digital step attenuator (DSA). All of the devices integrated into the ADL6317 are programmable via a 4-wire serial port interface (SPI).The ADL6317 is manufactured on an advanced silicon germanium (SiGe), bipolar complementary metal oxide semiconductor (BiCMOS) process.Applications 2G/3G/4G/long-term evolution (LTE) in FDD/TDD broadband communication systems

The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to 6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a 20 dBm typical output power for 1 dB compression (OP1dB) at 0.6 GHz to 6 GHz, and a typical output third-order intercept (OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA from a 5 V drain supply voltage. The low noise amplifier has a high output second-order intercept (OIP2) of 52 dBm typical at 0.6 GHz to 6 GHz, making the ADL8104 suitable for military and test instrumentation applications.The ADL8104 also features inputs and outputs that are internally matched to 50 ?. The RFIN and RFOUT pins are internally ac-coupled and the bias inductor is also integrated, making the ADL8104 ideal for surface-mounted technology (SMT)-based, high density applications.The ADL8104 is housed in an RoHS-compliant, 3 mm ? 3 mm, 16-lead LFCSP.APPLICATIONSTest instrumentationMilitary communications

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) wide gold ribbon bond of 0.076 mm to 0.152 mm (3 mil to 6 mil) minimal length.