The HMC416LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 2.75 to 3.0 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.5 dBm typical from a single supply of 3V @ 37 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC430LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a & HiperLAN WLAN? VSAT Radios? UNII & Point-to-Point Radios

The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1?2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.Applications Multi-Carrier Systems? GSM, GPRS & EDGE? CDMA & WCDMA? PHS

The HMC695LP4(E) are active miniature x4 frequency multipliers utilizing InGaP GaAs HBT technology in 4x4 mm leadless surface mount packages. Power output is +7 dBm typical from a +5V supply voltage and varies little vs. input power, temperature and supply voltage. Suppression of undesired fundamental and sub-harmonics is >25 dBc typical with respect to output signal level. The low additive SSB phase noise of -140 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. The HMC695LP4(E) are ideal for use in LO multiplier chains allowing reduced parts count vs. traditional approaches.APPLICATIONS Fiber Optic Applications Point-to-Point Radios Military Radar

The HMC533LP4(E) are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC533LP4(E) integrate resonators, negative resistance devices, varactor diodes and feature a divide-by-16 output. T he VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +12 dBm typical from a +5V supply voltage. Prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT Radio Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls Military End-Use Automotive Radar

The HMC373LP3 / HMC373LP3E are versatile, high?dynamic range GaAs MMIC Low Noise Amplifiers?that integrates a low loss LNA bypass mode on the?IC. The amplifier is ideal for GSM & CDMA cellular?basestation front-end receivers operating between?700 and 1000 MHz and provides 0.9 dB noise figure,?14 dB of gain and +35 dBm IP3 from a single supply of?+5V @ 90 mA. Input and output return losses are 28?and 12 dB respectively with the LNA requiring minimal?external components to optimize the RF input match,?RF ground and DC bias. By presenting an open or?short circuit to a single control line, the LNA can be?switched into a low 2.0 dB loss bypass mode reducing?the current consumption to 10 ?A. For applications?which require improved noise figure, please see the?HMC668LP3(E).Applications GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio

The HMC241ALP3E is a general-purpose, nonreflective, 100 MHz to 4 GHz single-pole, four-throw (SP4T) switch manufactured using a gallium arsenide (GaAs) process. This switch offers high isolation of 43 dB typical at 2 GHz, low insertion loss of 0.7 dB at 2 GHz, and on-chip termination of the isolated ports.The on-chip circuitry allows the HMC241ALP3E to operate at a single, positive supply voltage range of 3 V to 5 V. This switch requires two positive logic control voltages. The HMC241ALP3E includes an on-chip, binary two to four line decoder that provides logic control from two logic input lines to select one of the four radio frequency (RF) lines.The HMC241ALP3E is available in a 3 mm ? 3 mm, 16-lead LFCSP package. The HMC7992 is the silicon version of this switch and features better performance up to higher frequencies.APPLICATIONS Cellular/4 G infrastructure Wireless infrastructure Automotive telematics Mobile radios Test equipment

The HMC480ST89(E) is a InGaP HBT Gain Block MMIC SMT amplifiers covering DC to 5 GHz and packaged in an industry standard SOT89. The amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm P1dB output power for cellular/3G, FWA, CATV, microwave radio and test equipment applications.?The HMC480ST89(E) offers 19 dB of gain with a +34 dBm output IP3 at 1 GHz while requiring only 82 mA from a single positive supply.?The HMC480ST89(E) InGaP gain blocks offer excellent output IP3 and flat +19 to +20dBm output power performance through 5 GHz compared to equivalent SiGe based products.Applications Cellular / PCS / 3G? Fixed Wireless & WLAN? CATV, Cable Modem & DBS? Microwave Radio & Test Equipment

The HMC732LC4B is a wideband GaAs InGaP HBT MMIC Voltage Controlled Oscillator which incorporates the resonator, negative resistance device, and varactor diode. Output power and phase noise performance are excellent over temperature due to the oscillator's monolithic construction. The Vtune port accepts an analog tuning voltage from 0 to +23V. The HMC732LC4B VCO operates from a single +5V supply, consumes only 57 mA of current, and is housed in a RoHS compliant SMT package. This wideband VCO uniquely combines the attributes of ultra small size, low phase noise, low power consumption, and wide tuning range.APPLICATIONS Industrial/Medical Equipment Test & Measurement Equipment Military Radar, EW & ECM

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless

The HMC511LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC511LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +13 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC513LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC513LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by- 4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio Point-to-Point/Multi-Point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC529LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC529LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +8 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.APPLICATIONS VSAT Radio? Point-to-Point/Multi-point Radio? Test Equipment & Industrial Controls? Military End-Use

The HMC531LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC531LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is +7 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5?5 mm surface mount package, and requires no external matching components.?APPLICATIONS VSAT Radio Point-to-Point/Multi-point Radio Test Equipment & Industrial Controls Military End-Use

The HMC735 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC735 integrates resonators, negative resistance devices, varactor diodes and features a divide-by-4 frequency output. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +17 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONS Point-to-Multi-Point Radios Test Equipment & Industrial Controls SATCOM Military End-Use

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.Applications GSM, GPRS & EDGE? CDMA & W-CDMA? CATV/Cable Modem? Fixed Wireless

The HMC739 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC739 integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCOs phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is +8 dBm typical from a 5V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Point-to-Point Radios Point-to-Multi-Point Radios/LMDS VSAT

The HMC575LP4(E) is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology in a leadless RoHS compliant SMT package. When driven by a 3 dBm signal, the multiplier provides +17 dBm typical output power from 6 to 9 GHz. The Fo and 3Fo isolations are 15 dBc with respect to output signal level.This frequency multiplier features DC blocked I/O?s, and is ideal for use in LO multiplier chains for Pt to Pt & VSAT Radios yielding reduced parts count vs. traditional approaches. The low additive SSB Phase Noise of -140 dBc/Hz at 100 kHz offset helps maintain good system noise performance. The HMC575LP4(E) is compatible with surface mount manufacturing techniques.APPLICATIONS Wireless Local Loop Point-to-Point & VSAT Radios Test Instrumentation Military & Space

The HMC382LP3 & HMC382LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 1.0 dB noise figure, 17 dB gain and +30 dBm output IP3 from a single supply of +5V. The HMC382LP3 & HMC382LP3E feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC618LP3(E).Applications Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA GSM/GPRS & EDGE

The HMC904LC5 is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 12 dB with a noise figure of 3 dB and 30 dB of image rejection across the frequency band. The HMC904LC5 utilizes an LNA followed by an image reject mixer which is driven by an active x2 multiplier.The image reject mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The HMC904LC5 is a much smaller alternative to hybrid style image reject mixer downconverter assemblies, and is compatible with surface mount manufacturing techniques.APPLICATIONS Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications