EV1HMC424ALP3
Analog Devices Inc.The HMC424ALP3E is a broadband, 6-bit, gallium arsenide (GaAs), digital attenuator in low cost, leadless surface-mount package with a 31.5 dB attenuation control range in 0.5 dB steps.The HMC424ALP3E offers excellent attenuation accuracy of ?(0.2 dB + 4% of attenuation state) and high input linearity with a typical insertion loss of less than 4 dB over the specified frequency range from 0.1 GHz to 13.0 GHz. The attenuator bit values are 0.5 dB (LSB), 1 dB, 2 dB, 4 dB, 8 dB, and 16 dB for a total attenuation of 31.5 dB with a ?0.5 dB typical step error.The device allows a user to program the attenuation state via six parallel control inputs toggled between 0 V and VEE.The HMC424ALP3E operates with a single negative supply voltage from ?3 V to ?5 V, and requires an external level shifter to interface with a CMOS/transistor to transistor logic (TTL) interface.The HMC424ALP3E comes in a RoHS compliant, compact, 3 mm ? 3 mm, 16-lead lead frame chip scale package (LFCSP).Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors Intermediate frequency (IF) and RF designs Military and space
EV1HMC468ALP3
Analog Devices Inc.The HMC468ALP3E is a broadband 3-bit GaAs IC digital attenuators in a low cost leadless surface mount package. Covering DC to 6.0 GHz, the insertion loss is less than 1 dB typical up to 4 GHz. The attenuator bit values are 1 (LSB), 2 and 4 dB for a total attenuation of 7 dB. Attenuation accuracy is excellent at ?0.4 dB typical step error with an IIP3 of +55 dBm. Three control voltage inputs, toggled between 0 and +5V, are used to select each attenuation state. A single Vdd bias of +5V is required.APPLICATIONS Cellular; UMTS/3G Infrastructure? Fixed Wireless & WLL? Microwave Radio & VSAT? Test Equipment
EV1HMC525ALC4
Analog Devices Inc.The HMC525ALC4 is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband (SSB) upconverter. The mixer uses two standard double balanced mixer cells and a 90? hybrid fabricated in a GaAs, metalsemiconductor field effect transistor (MESFET) process. The HMC525ALC4 is a much smaller alternative to a hybrid style image reject mixer and a SSB upconverter assembly. The HMC525ALC4 eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques. Applications Microwave and very small aperture terminal radios Test equipment Point to point radios Military electronic warfare; electronic countermeasure; and command, control, communications, and intelligence
EV1HMC554ALC3B
Analog Devices Inc.The HMC554ALC3B is a general-purpose, double balanced mixer in a leadless RoHS compliant leadless chip carrier (LCC) package that can be used as an upconverter or downconverter between 10 GHz and 20 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external?components or matching circuitry. The HMC554ALC3B provides excellent local oscillator (LO) to RF and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS compliant HMC554ALC3B eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Military electronic warfare (EW); electronic countermeasure (ECM); and command, control, communications and intelligence (C3I)
EV1HMC5805ALS6
Analog Devices Inc.The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DCand 40 GHz. The amplifier provides 11.5 dB of gain,29 dBm output IP3 and +24 dBm of output power at1 dB gain compression while requiring 175 mA froma +10 V supply. The HMC5805ALS6 is ideal for EW,ECM, Radar and test equipment applications. TheHMC5805ALS6 amplifier I/Os are internally matchedto 50 Ohms and the 6x6 mm SMT package is wellsuited for automated assembly techniques.Applications Test instrumentation Microwave radio and VSAT Military and space Telecom infrastructure Fiber optics
EV1HMC6147ALC5A
Analog Devices Inc.The HMC6147ALC5A is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 13 dB with 25 dBc of sideband rejection. The HMC6147ALC5A utilizes a low noise amplifier to drive the I/Q mixer where the LO is driven by a X2 multiplier. IF1 and IF2 mixer inputs are provided and an external 90? hybrid is needed to select the required sideband.The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The HMC 6147ALC5A is a much smaller alternative to hybrid style single sideband converter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques.Applications Point-to-Point & Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors??
EV1HMC647ALP6
Analog Devices Inc.The HMC647ALP6E is a 6-bit digital phase shifter which is rated from 2.5 to 3.1 GHz, providing 360 degrees of phase coverage, with a LSB of 5.625 degrees. The HMC647ALP6E features very low RMS phase error of 1.5 degrees and extremely low insertion loss variation of ?0.4 dB across all phase states. This high accuracy phase shifter is controlled with positive control logic of 0/+5V The HMC647ALP6E is housed in a compact 6x6 mm plastic leadless SMT package and is internally matched to 50 Ohms with no external components.APPLICATIONS EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Phase Cancellation
EV1HMC6505ALC5
Analog Devices Inc.The HMC6505A is a compact gallium arsenide (GaAs),pseudomorphic (pHEMT), monolithic microwave integratedcircuit (MMIC) upconverter in a RoHS compliant package thatoperates from 5.5 GHz to 8.6 GHz. This device provides a smallsignal conversion gain of 15 dB with 22 dBc of sidebandrejection. The HMC6505A uses a variable gain amplifier (VGA)preceded by an in-phase and quadrature (I/Q) mixer that isdriven by an active local oscillator (LO). The IF1 and IF2 mixerinputs are provided, and an external 90? hybrid is needed toselect the required sideband. The I/Q mixer topology reducesthe need for filtering of unwanted sideband. The HMC6505Ais a smaller alternative to hybrid style single sideband (SSB)upconverter assemblies, and it eliminates the need for wirebonding by allowing the use of surface-mount manufacturingtechniques.The HMC6505A is available in 5 mm ? 5 mm, 32-terminalleadless chip carrier (LCC) package and operates over a ?40?Cto +85?C temperature range. An evaluation board for theHMC6505A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite communications Sensors
EV1HMC784AMS8G
Analog Devices Inc.The HMC784AMS8GE is a high power SPDT switch inan 8-lead MSOPG package for use in transmit-receiveapplications which require very low distortion athigh input signal power levels. The device can controlsignals from DC to 4 GHz. The design providesexceptional intermodulation performance; > +60 dBmthird order intercept at +5V bias. RF1 and RF2 arereflective shorts when ?OFF?. On-chip circuitry allowssingle positive supply operation from +3 Vdc to +8 Vdcat very low DC current with control inputs compatiblewith CMOS logic families.Applications Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment
EV1HMC798ALC4
Analog Devices Inc.The HMC798ALC4 is a 24 GHz to 34 GHz subharmonically pumped (?2) MMIC mixer with an integrated LO amplifier housed in a leadless, RoHS compliant LCC package. The HMC798ALC4 can be used as an upconverter or downconverter between 24 GHz and 34 GHz. The 2 ? LO to radio frequency (RF) isolation is typically 30 dB in a 24 GHz to 30 GHz frequency range and 36 dB in a 30 GHz to 34 GHz frequency range, eliminating the need for additional filtering. The LO amplifier is single bias at a 5 V dc with a typical 4 dBm LO drive level requirement The HMC798ALC4 eliminates the need for wire bonding, allowing use of surface-mount technology (SMT) manufacturing techniques.Applications Microwave and very small aperture terminal (VSAT) radios Test equipment Point to point radios Satellite communications (SATCOM) Military electronic warfare (EW), electronic countermeasure (ECM), and command, control, communications and intelligence (C3I)
EV1HMC812ALC4
Analog Devices Inc.The HMC812ALC4 is an absorptive Voltage Variable Attenuator (VVA) which operates from 5 - 30 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a 30 dB amplitude range. It features two shunt-type attenuators which are controlled by two analog voltages, Vctrl1 and Vctrl2. Optimum linearity performance of the attenuator is achieved by first varying Vctrl1 of the 1st attenuation stage from -5V to 0V with Vctrl2 fixed at -5V. The control voltage of the 2nd attenuation stage, Vctrl2, should then be varied from -5V to 0V, with Vctrl1 fixed at 0V. The HMC812ALC4 is housed in a RoHS compliant 4x4 mm QFN leadless ceramic package.Furthermore, if the Vctrl1 and Vctrl2 pins are connected together it is possible to achieve the full analog attenuation range with only a small degradation in input IP3 performance. Applications include AGC circuits and temperature compensation of multiple gain stages in microwave point-to-point and VSAT radios.Applications Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar
EV1HMC815BLC5
Analog Devices Inc.The HMC815B is a compact gallium arsenide (GaAs),pseudomorphic high electron mobility transistor (pHEMT),monolithic microwave integrated circuit (MMIC) upconverterin a RoHS compliant package that operates from 21 GHz to27 GHz. This device provides a small signal conversion gain of12 dB and a sideband rejection of 20 dBc. The HMC815Butilizes a driver amplifier proceeded by an in phase/quadrature(I/Q) mixer where the LO is driven by an active 2? multiplier.IF1 and IF2 mixer inputs are provided, and an external 90?hybrid is needed to select the required sideband. The I/Q mixertopology reduces the need for filtering of unwanted sideband.The HMC815B is a smaller alternative to hybrid style singlesideband (SSB) downconverter assemblies, and it eliminates theneed for wire bonding by allowing the use of surface-mountmanufacturing techniques.The HMC815B is available in 4.90 mm ? 4.90 mm, 32-terminalceramic LCC package and operates over the ?40?C to +85?Ctemperature range. An evaluation board for the HMC815B isalso available upon request.Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors
EV1HMC8410LP2F
Analog Devices Inc.The HMC8410 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.01 GHz to 10 GHz. The HMC8410 provides a typical gain of 19.5 dB, a 1.1 dB typical noise figure, and a typical output IP3 of 33 dBm, requiring only 65 mA from a 5 V supply voltage. The saturated output power (PSAT) of up to 22.5 dBm enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many of Analog Devices, Inc., balanced, I/Q or image rejection mixers.The HMC8410 also features inputs/outputs (I/Os) that are internally matched to 50 ?, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The HMC8410 is housed in a RoHS-compliant, 2 mm ? 2 mm, LFCSP package.Multifunction pin names can be referenced by their relevant function only.APPLICATIONS Software defined radios Electronics warfare Radar applications
EV1HMC849ALP4C
Analog Devices Inc.The HMC849ALP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 5 - 6 GHz WiMAX band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+3V or 0/+5V at very low DC currents. An enable input (EN) set to logic high will put the switch in an 'all off' state.APPLICATIONS Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment
DC1120A
Analog Devices Inc.The LT5538 is a 40MHz to 3800MHz monolithic logarithmic RF power detector, capable of measuring RF signals over a wide dynamic range, from ?75dBm to 10dBm. The RF signal in an equivalent decibel-scaled value is precisely converted into DC voltage on a linear scale. The wide linear dynamic range is achieved by measuring the RF signal using cascaded RF limiters and RF detectors. Their outputs are summed to generate an accurate linear DC voltage proportional to the input RF signal in dBm. The LT5538 delivers superior temperature stable output (within ?1dB over full temperature range) from 40MHz to 3.8GHz. The output is buffered with a low impedance driver.Applications Received Signal Strength Indication (RSSI) RF Power Measurement and Control RF/IF Power Detection Receiver RF/IF Gain Control Envelope Detection ASK Receiver
DC1121A
Analog Devices Inc.The LTC3524 is an integrated BIAS and white LED power converter solution for small/medium-sized polysilicon thin ?lm transistor (TFT) liquid crystal (LCD) display panels. The device operates from a single Lithium-Ion/polymer battery or any voltage source between 2.5V and 6V. A 1.5MHz synchronous boost converter generates a programmable low noise, high efficiency 25mA TFT supply of up to 6.0V. Regulated, low ripple charge pumps are used to generate up to +20V and ?20V at 2mA. Output sequencing is internally controlled to insure proper initialization and rapid discharge of the LCD panel in shutdown. A second 1.5MHz boost converter powers one or two LED strings with up to ?ve series elements each. LED current and display brightness can be controlled over a wide range using analog or digital means up to 25mA.The LTC3524 is offered in the 4mm ? 4mm 24-pin QFN package, minimizing the total solution footprint.Applications PDAs, Palmtop Computers Digital Still and Video Cameras Handheld GPS Portable Instrument Displays Portable Media Players
DC1122A
Analog Devices Inc.The LT3681 is an adjustable frequency (300kHz to 2.8MHz) monolithic buck switching regulator that accepts input voltages up to 34V (36V maximum). A high efficiency 0.18? switch is included on the die along with a boost Schottky diode and the necessary oscillator, control, and logic circuitry. An undedicated power Schottky diode is integrated into the LT3681 to minimize the solution size. Current mode topology is used for fast transient response and good loop stability. Low ripple Burst Mode operation maintains high efficiency at low output currents while keeping output ripple below 15mV in a typical application. In addition, the LT3681 can further enhance low output current efficiency by drawing bias current from the output when VOUT is above 3V. Shutdown reduces input supply current to less than 1?A while a resistor and capacitor on the RUN/SS pin provide a controlled output voltage ramp (soft-start). A power good flag signals when VOUT reaches 90% of the programmed output voltage. The LT3681 is available in 14-Pin 4mm x 3mm DFN package with exposed pads for low thermal resistance.Applications Automotive Battery Regulation Power for Portable Products Distributed Supply Regulation Industrial Supplies Wall Transformer Regulation
LT3498EDDB Demo Board | Boost LED Driver and OLED Driver, 3V ≤ VIN ≤ 5.25V, VLED up to 26V @ 20mA (×6)
Analog Devices Inc.Demonstration circuit 1137 is a 20mA Six White LED Driver and OLED driver with Integrated Schottky featuring the LT3498. The LT3498 is a dual output boost converter featuring a 2.3MHz PWM LED driver and a PFM (Pulse Frequency Modulation) OLED driver. The demo board is designed to operate from 3V to 5V, ideal for Li Ion battery powered dual display applications, such as main and sub-displays for cell phones.
The demo board offers flexible LED dimming methods. Users can use DC dimming, filtered PWM dimming or direct PWM dimming. The parts functions as a “one-wire” current source from the LED string point of view. The circuit protection clamps LED driver output to 27V (typ) if an open circuit condition occurs. When CTRL2 is higher than 1.5V, the demo board OLED supply output voltage is 16V. It can deliver up to 24mA from a 3V source.
LT3580EDD Demo Board | 3V ≤ VIN ≤ 10V, VOUT = 12V @ 300mA
Analog Devices Inc.Demonstration circuits 1144A-A and 1144A-B feature the LT3580EDD in Boost and Inverting regulator configurations, respectively. The demo circuits demonstrate small size and low component count. The DC1144A-A is designed to convert a 3V to 10V source to 12V at 300mA, while the DC1144A-B inverter converts a 5V to 12V source to -12V at 350mA.
The LT3580 operates with inputs as high as 32V but in these demo boards the input is limited by the voltage rating of the input capacitors and the magnitude of the boost output. The DC1146A-B can easily be configured into a SEPIC converter.
LT3580EDD Demo Board | 5V ≤ VIN ≤ 12, VOUT = -12V @ 350mA
Analog Devices Inc.Demonstration circuits 1144A-A and 1144A-B feature the LT3580EDD in Boost and Inverting regulator configurations, respectively. The demo circuits demonstrate small size and low component count. The DC1144A-A is designed to convert a 3V to 10V source to 12V at 300mA, while the DC1144A-B inverter converts a 5V to 12V source to -12V at 350mA.
The LT3580 operates with inputs as high as 32V but in these demo boards the input is limited by the voltage rating of the input capacitors and the magnitude of the boost output. The DC1146A-B can easily be configured into a SEPIC converter.
