The LM5113 device is designed to drive the high-side and low-side enhancement mode Gallium Nitride (GaN) FETs in a half-bridge configuration. The floating high-side gate is capable of driving enhancement mode GaN FETs up to 100 V. Used with the DSBGA package the LM5113 device is especially suited for high-frequency operation. Care must be taken at high-frequency operation to ensure that adequate thermal design tolerance is present for the worst-case driver power dissipation. Furthermore, a good understanding of the driver losses for different load mechanisms is very helpful in estimating the on die power loss in the GaN driver. This application report demonstrates the operation of LM5113 device at high-frequency for hard-switching and soft-switching applications. It also provides an estimate of the losses in the driver based on calculations and an analytical approach.

A Controller Area Network (CAN) is ideally suited to the many high-level industrial protocols embracing CAN and ISO-11898:2003 as their physical layer. Its cost, performance, and upgradeability provide for tremendous flexibility in system design. This application report presents an introduction to the CAN fundamentals, operating principles, and the implementation of a basic CAN bus with TI's CAN transceivers and DSPs. The electrical layer requirements of a CAN bus are discussed along with the importance of the different features of a TI CAN transceiver.

This document discusses the use of the ADS1247 and ADS1248 precision analog-to-digital converters (ADCs) together with a resistive temperature device (RTD) and thermocouple to measure temperature. Included are detailed examples of the most common configurations of a two-wire RTD, a three-wire RTD, a four-wire RTD, and a thermocouple with cold junction compensation. This document provides sufficient information to enable several alternate configurations to be implemented.