Description

Toshiba N-Channel MOSFET, 30.8 A, 600 V, 4-Pin TO-247 TK31Z60X,S1F(O, Mounting Type: Through Hole, Maximum Drain Source Resistance: 880 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.7V