Description

Toshiba N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-3PN TK10J80E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm