Description

Toshiba Dual N-Channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 T2N7002BK, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.75 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 1 W, Maximum Gate Source Voltage: ±20 V, Height: 0.9mm