Description

Toshiba Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 SSM6N7002KFU, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.75 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Minimum Gate Threshold Voltage: 1.1V, Maximum Power Dissipation: 500 mW, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101