Description

IGBT 600V TO-3P(N); DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-3P; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jun-2015); Current Ic Continuous a Max:30A; Fall Time Typ:50ns; Junction Temperature Tj Max:150°C; Junction to Case Thermal Resistance A:0.735°C/W; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:170W; Pulsed Current Icm:60A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V